SFG08R08PF MOSFET. Datasheet pdf. Equivalent

   Type Designator: SFG08R08PF
   Marking Code: SFG08R08P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 70 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 43.1 nC
   trⓘ - Rise Time: 20.2 nS
   Cossⓘ - Output Capacitance: 963.5 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO220

SFG08R08PF Transistor Equivalent Substitute - MOSFET Cross-Reference Search