SFG10R10DF Datasheet. Specs and Replacement

Type Designator: SFG10R10DF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 361 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: TO252

SFG10R10DF substitution

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SFG10R10DF datasheet

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Detailed specifications: SFG10R05IF, SFG10R05KF, SFG10R05PF, SFG10R08BF, SFG10R08GF, SFG10R08PF, SFG10R10AF, SFG10R10BF, AON7403, SFG10R10FF, SFG10R10GF, SFG10R10IF, SFG10R10PF, SFG10R12AF, SFG10R12BF, SFG10R12DF, SFG10R12GF

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs