FDN372S
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDN372S
Marking Code: 372
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 2.6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 5.8
nC
trⓘ - Rise Time: 5
nS
Cossⓘ -
Output Capacitance: 115
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04
Ohm
Package:
SSOT3
FDN372S
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDN372S
Datasheet (PDF)
..1. Size:142K fairchild semi
fdn372s.pdf
September 2002 FDN372S 30V N-Channel PowerTrench SyncFET General Description Features The FDN372S is designed to replace a single MOSFET 2.6 A, 30 V. RDS(ON) = 40 m @ VGS = 10 V and Schottky diode, used in synchronous DC-DC RDS(ON) = 50 m @ VGS = 4.5 V power supplies, with a single integrated component. This 30V MOSFET is designed to maximize po
9.1. Size:84K fairchild semi
fdn371n.pdf
September 2001FDN371N20V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis 20V N-Channel MOSFET uses Fairchilds high 2.5 A, 20 V. RDS(ON) = 50 m @ VGS = 4.5 Vvoltage PowerTrench process. It has been optimized forRDS(ON) = 60 m @ VGS = 2.5 V power management applications.Applications Low gate charge (7.6 nC typical) Load switch Fast
9.2. Size:2290K cn vbsemi
fdn371n.pdf
FDN371Nwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G
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