September 2002 FDN372S 30V N-Channel PowerTrench SyncFET General Description Features The FDN372S is designed to replace a single MOSFET 2.6 A, 30 V. RDS(ON) = 40 m @ VGS = 10 V and Schottky diode, used in synchronous DC-DC RDS(ON) = 50 m @ VGS = 4.5 V power supplies, with a single integrated component. This 30V MOSFET is designed to maximize po

September 2001FDN371N20V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis 20V N-Channel MOSFET uses Fairchilds high 2.5 A, 20 V. RDS(ON) = 50 m @ VGS = 4.5 Vvoltage PowerTrench process. It has been optimized forRDS(ON) = 60 m @ VGS = 2.5 V power management applications.Applications Low gate charge (7.6 nC typical) Load switch Fast

FDN371Nwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G