SFG10R12AF Datasheet. Specs and Replacement

Type Designator: SFG10R12AF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 359.3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: TO251

SFG10R12AF substitution

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SFG10R12AF datasheet

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Detailed specifications: SFG10R08PF, SFG10R10AF, SFG10R10BF, SFG10R10DF, SFG10R10FF, SFG10R10GF, SFG10R10IF, SFG10R10PF, AOD4184A, SFG10R12BF, SFG10R12DF, SFG10R12GF, SFG10R12PF, SFG10R140DF, SFG10R14BF, SFG10R14GF, SFG10R20AF

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