SFG10S08DF Datasheet. Specs and Replacement

Type Designator: SFG10S08DF  📄📄 

Marking Code: SFG10S08D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V

Qg ⓘ - Total Gate Charge: 33.9 nC

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 1191 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO252

SFG10S08DF substitution

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SFG10S08DF datasheet

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Detailed specifications: SFG10R20AF, SFG10R20BF, SFG10R20DF, SFG10R20GF, SFG10R20PF, SFG10R50DF, SFG10R75BCF, SFG10R75DF, IRF640, SFG10S08GF, SFG10S08PF, SFG10S10DF, SFG10S10GF, SFG10S12BF, SFG10S12DF, SFG10S20DF, SFG10S20GF

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