SFG10S10GF Datasheet. Specs and Replacement

Type Designator: SFG10S10GF  📄📄 

Marking Code: SFG10S10G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 107 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V

Qg ⓘ - Total Gate Charge: 28.9 nC

tr ⓘ - Rise Time: 5.2 nS

Cossⓘ - Output Capacitance: 322 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: PDFN5X6

SFG10S10GF substitution

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Detailed specifications: SFG10R20PF, SFG10R50DF, SFG10R75BCF, SFG10R75DF, SFG10S08DF, SFG10S08GF, SFG10S08PF, SFG10S10DF, IRF640N, SFG10S12BF, SFG10S12DF, SFG10S20DF, SFG10S20GF, SFG10S25DF, SFG110N12FF, SFG110N12IF, SFG110N12KF

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