All MOSFET. FDN5630 Datasheet

 

FDN5630 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDN5630
   Marking Code: 5630
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 0.5 W
   Maximum Drain-Source Voltage |Vds|: 60 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
   Maximum Drain Current |Id|: 1.7 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 7 nC
   Rise Time (tr): 6 nS
   Drain-Source Capacitance (Cd): 102 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.1 Ohm
   Package: SSOT3

 FDN5630 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDN5630 Datasheet (PDF)

 ..1. Size:91K  fairchild semi
 fdn5630.pdf

FDN5630 FDN5630

March 2000FDN563060V N-Channel PowerTrench MOSFETGeneral DescriptionFeaturesThis N-Channel MOSFET has been designed specifically 1.7 A, 60 V. RDS(ON) = 0.100 @ VGS = 10 Vto improve the overall efficiency of DC/DC converters usingRDS(ON) = 0.120 @ VGS = 6 V.either synchronous or conventional switching PWM Optimized for use in high frequenc

 ..2. Size:1125K  kexin
 fdn5630.pdf

FDN5630 FDN5630

SMD Type MOSFETN-Channel MOSFETFDN5630 (KDN5630)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) = 60V ID = 1.7 A (VGS = 10V)1 2 RDS(ON) 100m (VGS = 10V)+0.1+0.050.95-0.1 0.1-0.01 RDS(ON) 120m (VGS = 6V)+0.11.9-0.1D1. Gate2. Source3. DrainG S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating

 ..3. Size:1473K  cn vbsemi
 fdn5630.pdf

FDN5630 FDN5630

FDN5630www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available TrenchFET Power MOSFET0.085 at VGS = 10 V 4.060 2.1 nC 100 % Rg Tested0.096 at VGS = 4.5 V 3.8 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC ConverterDTO-236(SOT23)G 1

 0.1. Size:944K  kexin
 fdn5630-3.pdf

FDN5630 FDN5630

SMD Type MOSFETN-Channel MOSFETFDN5630 (KDN5630)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13 Features VDS (V) = 60V ID = 1.7 A (VGS = 10V)1 2 RDS(ON) 100m (VGS = 10V) +0.02+0.10.15 -0.020.95 -0.1+0.11.9-0.2 RDS(ON) 120m (VGS = 6V)1. GateD2. Source3. DrainG S Absolute Maximum Ratings Ta = 25Parameter Symbol Ra

 8.1. Size:260K  fairchild semi
 fdn5632n f085.pdf

FDN5630 FDN5630

September 2008FDN5632N_F085tmN-Channel Logic Level PowerTrench MOSFET60V, 1.6A, 98m Features Applications RDS(on) = 98m at VGS = 4.5V, ID = 1.6A DC/DC converter RDS(on) = 82m at VGS = 10V, ID = 1.7A Motor Drives Typ Qg(TOT) = 9.2nC at VGS = 10V Low Miller Charge Qualified to AEC Q101 RoHS Compliant2008 Fairchild Semiconductor Corporation 1 www.fairchild

 8.2. Size:599K  onsemi
 fdn5632n-f085.pdf

FDN5630 FDN5630

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

Datasheet: FDN352AP , FDN359BN , STM4884A , FDN361BN , STM4884 , FDN372S , STM4880 , FDN5618P , CRST041N08N , FDN8601 , STM4840 , FDN86246 , FDP025N06 , FDP030N06 , FDP032N08 , FDP036N10A , STM4639 .

 

 
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