SFG110N12IF Spec and Replacement
Type Designator: SFG110N12IF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 192 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 110 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 779 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: TO262
SFG110N12IF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SFG110N12IF Specs
Detailed specifications: SFG10S10DF , SFG10S10GF , SFG10S12BF , SFG10S12DF , SFG10S20DF , SFG10S20GF , SFG10S25DF , SFG110N12FF , IRFB4115 , SFG110N12KF , SFG110N12PF , SFG12R03HNF , SFG12R12DF , SFG12R12GF , SFG130N08KF , SFG130N08PF , SFG130N10FF .
History: IPP60R190P6 | AP02N90JB
Keywords - SFG110N12IF MOSFET specs
SFG110N12IF cross reference
SFG110N12IF equivalent finder
SFG110N12IF lookup
SFG110N12IF substitution
SFG110N12IF replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
