SFG170N10PF MOSFET. Datasheet pdf. Equivalent

   Type Designator: SFG170N10PF
   Marking Code: SFG170N10P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 340 W
   Maximum Drain-Source Voltage |Vds|: 100 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 170 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 115 nC
   Rise Time (tr): 19.7 nS
   Drain-Source Capacitance (Cd): 1300 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.003 Ohm
   Package: TO220

SFG170N10PF Transistor Equivalent Substitute - MOSFET Cross-Reference Search