AP0803QD Datasheet. Specs and Replacement

Type Designator: AP0803QD  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 225 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm

Package: PMPAK3X3

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AP0803QD datasheet

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AP0803QD

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AP0803QD

AP0803GMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible RDS(ON) 8.5m Low On-resistance ID 50A G RoHS Compliant S D D Description D D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device des... See More ⇒

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AP0803QD

AP0803GMT-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible RDS(ON) 8.5m Low On-resistance ID 50A G RoHS Compliant & Halogen-Free S D D Description D D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugg... See More ⇒

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Detailed specifications: SFS08R20PF, SFS10R055DNF, SFS12R08FNF, SFS12R08GNF, SFS12R08PNF, SFS130N06GF, SFS15R065KNF, SFS15R065PNF, AON7403, AP2045Q, AP20P30Q, AP30H50Q, AP30H80G, AP30H80Q, AP3908GD, AP3908QD, AP3910GD

Keywords - AP0803QD MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs