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AP0803QD Spec and Replacement


   Type Designator: AP0803QD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 225 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
   Package: PMPAK3X3

 AP0803QD Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP0803QD Specs

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AP0803QD

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AP0803QD

AP0803GMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible RDS(ON) 8.5m Low On-resistance ID 50A G RoHS Compliant S D D Description D D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device des... See More ⇒

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 ap0803gmt-a-hf.pdf pdf_icon

AP0803QD

AP0803GMT-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible RDS(ON) 8.5m Low On-resistance ID 50A G RoHS Compliant & Halogen-Free S D D Description D D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugg... See More ⇒

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Detailed specifications: SFS08R20PF , SFS10R055DNF , SFS12R08FNF , SFS12R08GNF , SFS12R08PNF , SFS130N06GF , SFS15R065KNF , SFS15R065PNF , AON7403 , AP2045Q , AP20P30Q , AP30H50Q , AP30H80G , AP30H80Q , AP3908GD , AP3908QD , AP3910GD .

History: IPP60R190P6 | AP02N90JB

Keywords - AP0803QD MOSFET specs

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