AP20P30Q Specs and Replacement
Type Designator: AP20P30Q
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ -
Output Capacitance: 215 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: DFN3X3
- MOSFET ⓘ Cross-Reference Search
AP20P30Q datasheet
9.1. Size:80K ape
ap20p02gh ap20p02gj.pdf 
AP20P02GH/J Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -20V 2.5V Gate Drive Capability RDS(ON) 52m Fast Switching ID -18A G S Description The Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast sw... See More ⇒
9.2. Size:2702K cn apm
ap20p02d.pdf
AP20P02D -20V P-Channel Enhancement Mode MOSFET Description The AP20P02D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-20A DS D R ... See More ⇒
9.3. Size:1198K cn apm
ap20p01bf.pdf
AP20P01BF -18V P-Channel Enhancement Mode MOSFET Description The AP20P01BF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -18V I =-20A DS D R ... See More ⇒
9.4. Size:1388K cn apm
ap20p02si.pdf
AP20P02SI -20V P-Channel Enhancement Mode MOSFET Description The AP20P02SI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-20A DS D R ... See More ⇒
9.5. Size:1216K cn apm
ap20p02bf.pdf
AP20P02BF -20V P-Channel Enhancement Mode MOSFET Description The AP20P02BF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-20A DS D R ... See More ⇒
9.6. Size:1461K cn apm
ap20p03d.pdf
AP20P03D -30V P-Channel Enhancement Mode MOSFET Description The AP20P03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-20 A DS D R ... See More ⇒
9.7. Size:1428K cn apm
ap20p04d.pdf
AP20P04D -40V P-Channel Enhancement Mode MOSFET Description The AP20P04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-20A DS D R ... See More ⇒
9.8. Size:1417K cn apm
ap20p03df.pdf
AP20P03DF 30V P-Channel Enhancement Mode MOSFET Description The AP20P03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-20A DS D R ... See More ⇒
Detailed specifications: SFS12R08FNF, SFS12R08GNF, SFS12R08PNF, SFS130N06GF, SFS15R065KNF, SFS15R065PNF, AP0803QD, AP2045Q, EMB04N03H, AP30H50Q, AP30H80G, AP30H80Q, AP3908GD, AP3908QD, AP3910GD, AP4008QD, AP4085G
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
