AP20P30Q Datasheet and Replacement
Type Designator: AP20P30Q
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 215 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: DFN3X3
AP20P30Q substitution
AP20P30Q Datasheet (PDF)
ap20p02gh ap20p02gj.pdf

AP20P02GH/JPb Free Plating ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETSimple Drive Requirement D BVDSS -20V 2.5V Gate Drive Capability RDS(ON) 52mFast Switching ID -18A GSDescriptionThe Advanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast sw
Datasheet: SFS12R08FNF , SFS12R08GNF , SFS12R08PNF , SFS130N06GF , SFS15R065KNF , SFS15R065PNF , AP0803QD , AP2045Q , 2SK3918 , AP30H50Q , AP30H80G , AP30H80Q , AP3908GD , AP3908QD , AP3910GD , AP4008QD , AP4085G .
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History: RDN120N25 | 2SK791



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