All MOSFET. AP20P30Q Datasheet

 

AP20P30Q MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP20P30Q
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 23.2 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 215 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: DFN3X3

 AP20P30Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP20P30Q Datasheet (PDF)

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 ap20p30q.pdf

AP20P30Q AP20P30Q

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 ap20p02gh ap20p02gj.pdf

AP20P30Q AP20P30Q

AP20P02GH/JPb Free Plating ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETSimple Drive Requirement D BVDSS -20V 2.5V Gate Drive Capability RDS(ON) 52mFast Switching ID -18A GSDescriptionThe Advanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast sw

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