All MOSFET. AP20P30Q Datasheet

 

AP20P30Q Datasheet and Replacement


   Type Designator: AP20P30Q
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 215 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: DFN3X3
 

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AP20P30Q Datasheet (PDF)

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AP20P30Q

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AP20P30Q

AP20P02GH/JPb Free Plating ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETSimple Drive Requirement D BVDSS -20V 2.5V Gate Drive Capability RDS(ON) 52mFast Switching ID -18A GSDescriptionThe Advanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast sw

Datasheet: SFS12R08FNF , SFS12R08GNF , SFS12R08PNF , SFS130N06GF , SFS15R065KNF , SFS15R065PNF , AP0803QD , AP2045Q , 2SK3918 , AP30H50Q , AP30H80G , AP30H80Q , AP3908GD , AP3908QD , AP3910GD , AP4008QD , AP4085G .

History: OSS60R099JF | 4N80G-TND-R | GSM4925WS | DH009N02P | CJ3406 | STL23NM50N | SWB072R08ET

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