Аналоги AP20P30Q. Основные параметры
Наименование производителя: AP20P30Q
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 40
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 20
A
Tj ⓘ - Максимальная температура канала: 175
°C
tr ⓘ -
Время нарастания: 8
ns
Cossⓘ - Выходная емкость: 215
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.012
Ohm
Тип корпуса:
DFN3X3
Аналог (замена) для AP20P30Q
-
подбор ⓘ MOSFET транзистора по параметрам
AP20P30Q даташит
9.1. Size:80K ape
ap20p02gh ap20p02gj.pdf 
AP20P02GH/J Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -20V 2.5V Gate Drive Capability RDS(ON) 52m Fast Switching ID -18A G S Description The Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast sw
9.2. Size:2702K cn apm
ap20p02d.pdf 
AP20P02D -20V P-Channel Enhancement Mode MOSFET Description The AP20P02D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-20A DS D R
9.3. Size:1198K cn apm
ap20p01bf.pdf 
AP20P01BF -18V P-Channel Enhancement Mode MOSFET Description The AP20P01BF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -18V I =-20A DS D R
9.4. Size:1388K cn apm
ap20p02si.pdf 
AP20P02SI -20V P-Channel Enhancement Mode MOSFET Description The AP20P02SI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-20A DS D R
9.5. Size:1216K cn apm
ap20p02bf.pdf 
AP20P02BF -20V P-Channel Enhancement Mode MOSFET Description The AP20P02BF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-20A DS D R
9.6. Size:1461K cn apm
ap20p03d.pdf 
AP20P03D -30V P-Channel Enhancement Mode MOSFET Description The AP20P03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-20 A DS D R
9.7. Size:1428K cn apm
ap20p04d.pdf 
AP20P04D -40V P-Channel Enhancement Mode MOSFET Description The AP20P04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-20A DS D R
9.8. Size:1417K cn apm
ap20p03df.pdf 
AP20P03DF 30V P-Channel Enhancement Mode MOSFET Description The AP20P03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-20A DS D R
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