FDP038AN06A0 Datasheet. Specs and Replacement

Type Designator: FDP038AN06A0  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 310 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm

Package: TO220

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FDP038AN06A0 datasheet

 ..1. Size:332K  fairchild semi
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FDP038AN06A0

December 2010 FDP038AN06A0 / FDI038AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 3.8m Features Applications rDS(ON) = 3.5m (Typ.), VGS = 10V, ID = 80A Motor / Body Load Control Qg(tot) = 95nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive P... See More ⇒

 ..2. Size:586K  onsemi
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FDP038AN06A0

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 ..3. Size:289K  inchange semiconductor
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FDP038AN06A0

isc N-Channel MOSFET Transistor FDP038AN06A0 FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 5.9m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so... See More ⇒

 9.1. Size:482K  fairchild semi
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FDP038AN06A0

June 2009 FDP030N06 N-Channel PowerTrench MOSFET 60V, 193A, 3.2m Features Description RDS(on) = 2.6m ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been espe- Fast Switching Speed cially tailored to minimize the on-state resistance and yet maintain superior switching performance. ... See More ⇒

Detailed specifications: FDN8601, STM4840, FDN86246, FDP025N06, FDP030N06, FDP032N08, FDP036N10A, STM4639, IRL3713, FDP040N06, FDP045N10AF102, STM4637, FDP047N08, FDP047N10, STM4635, FDP050AN06A0, FDP054N10

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