All MOSFET. FDP038AN06A0 Datasheet

 

FDP038AN06A0 MOSFET. Datasheet pdf. Equivalent

Type Designator: FDP038AN06A0

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 310 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 80 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 96 nC

Maximum Drain-Source On-State Resistance (Rds): 0.0038 Ohm

Package: TO220

FDP038AN06A0 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDP038AN06A0 Datasheet (PDF)

1.1. fdp038an06a0 fdi038an06a0.pdf Size:332K _fairchild_semi

FDP038AN06A0
FDP038AN06A0

December 2010 FDP038AN06A0 / FDI038AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 3.8m? Features Applications rDS(ON) = 3.5m? (Typ.), VGS = 10V, ID = 80A Motor / Body Load Control Qg(tot) = 95nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC converters a

5.1. fdp036n10a.pdf Size:247K _fairchild_semi

FDP038AN06A0
FDP038AN06A0

July 2011 FDP036N10A tm N-Channel PowerTrench MOSFET 100V, 214A, 3.6m? Features Description RDS(on) = 3.2m? ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semicon- ductors advanced PowerTrench process that has been espe- Fast Switching Speed cially tailored to minimize the on-state resistance and yet maintain superior switching performance. Low

5.2. fdp032n08b.pdf Size:669K _fairchild_semi

FDP038AN06A0
FDP038AN06A0

November 2013 FDP032N08B N-Channel PowerTrench® MOSFET 80 V, 211 A, 3.3 mΩ Features Description • RDS(on) = 2.85 mΩ (Typ.) @ VGS = 10 V, ID = 50 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor’s advanced PowerTrench® process that has been tai- • Low FOM RDS(on) * QG lored to minimize the on-state resistance while maintaining superior switching performance.

 5.3. fdp030n06b f102.pdf Size:641K _fairchild_semi

FDP038AN06A0
FDP038AN06A0

November 2013 FDP030N06B_F102 N-Channel PowerTrench® MOSFET 60 V, 195 A, 3.1 mΩ Features Description • RDS(on) = 2.67 mΩ (Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor’s advanced PowerTrench® process that has been tai- • Low FOM RDS(on) * QG lored to minimize the on-state resistance while maintaining superior switching perfor

5.4. fdp030n06.pdf Size:482K _fairchild_semi

FDP038AN06A0
FDP038AN06A0

June 2009 FDP030N06 N-Channel PowerTrench MOSFET 60V, 193A, 3.2m? Features Description RDS(on) = 2.6m? ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semicon- ductors advanced PowerTrench process that has been espe- Fast Switching Speed cially tailored to minimize the on-state resistance and yet maintain superior switching performance. Low Gate Ch

 5.5. fdp032n08.pdf Size:619K _fairchild_semi

FDP038AN06A0
FDP038AN06A0

July 2008 FDP032N08 tm N-Channel PowerTrench MOSFET 75V, 235A, 3.2m? Features Description RDS(on) = 2.5m? ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semicon- ductors adcanced PowerTrench process that has been espe- Fast switching speed cially tailored to minimize the on-state resistance and yet Low gate charge maintain superior switching per

5.6. fdp039n08b.pdf Size:691K _fairchild_semi

FDP038AN06A0
FDP038AN06A0

November 2013 FDP039N08B N-Channel PowerTrench® MOSFET 80 V, 171 A, 3.9 mΩ Features Description • RDS(on) = 3.16 mΩ (Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor’s advanced PowerTrench® process that has been tai- • Low FOM RDS(on) * QG lored to minimize the on-state resistance while maintaining superior switching performance

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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