All MOSFET. CJAC110SN10A Datasheet

 

CJAC110SN10A Datasheet and Replacement


   Type Designator: CJAC110SN10A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id| ⓘ - Maximum Drain Current: 110 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 93 nC
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 902 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: PDFNWB5X6-8L
 

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CJAC110SN10A Datasheet (PDF)

 ..1. Size:2395K  1
 cjac110sn10a.pdf pdf_icon

CJAC110SN10A

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L Plastic-Encapsulate MOSFETS CJAC110SN10A N-Channel Power MOSFETPDFN 56-8L V(BR)DSS RDS(onTYP ID 3.4m@10V100V 110A4.5m@4.5VDESCRIPTION The CJAC110SN10A uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEA

 3.1. Size:1662K  1
 cjac110sn10.pdf pdf_icon

CJAC110SN10A

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L Plastic-Encapsulate MOSFETS CJAC110SN10 N-Channel Power MOSFETPDFN 56-8L V(BR)DSS RDS(on)TYP ID 100V 4.3m@10V 110ADESCRIPTION The CJAC110SN10 uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES Hig

 3.2. Size:1662K  jiangsu
 cjac110sn10.pdf pdf_icon

CJAC110SN10A

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L Plastic-Encapsulate MOSFETS CJAC110SN10 N-Channel Power MOSFETPDFN 56-8L V(BR)DSS RDS(on)TYP ID 100V 4.3m@10V 110ADESCRIPTION The CJAC110SN10 uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES Hig

 7.1. Size:2101K  1
 cjac110n03.pdf pdf_icon

CJAC110SN10A

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L Plastic-Encapsulate MOSFETS CJAC110N03 N-Channel Power MOSFETID V(BR)DSS RDS(on)TYPPDFN 56-8L 1.8m@10V30 V110A3.5m@4.5VDESCRIPTION FEATURES

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Datasheet: APG095N01G , ASDM30N55E-R , ASDM30N65E-R , ASDM30P11TD-R , ASDM30P30CTD-R , ASDM40N52E-R , AUIRFN8405TR , CJAC100SN08U , P55NF06 , CJAC80SN10 , DMN3009LFVW-7 , DMN3010LFG-7 , DMN3016LPS-13 , DMNH10H028SPSQ-13 , DMNH4006SPSQ-13 , DMP2002UPS-13 , DMP22M2UPS-13 .

Keywords - CJAC110SN10A MOSFET datasheet

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