CJAC80SN10 Specs and Replacement
Type Designator: CJAC80SN10
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4.8 nS
Cossⓘ - Output Capacitance: 420 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: PDFNWB5X6-8L
CJAC80SN10 substitution
- MOSFET ⓘ Cross-Reference Search
CJAC80SN10 datasheet
cjac80sn10.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB5 6-8L Plastic-Encapsulate MOSFETS CJAC80SN10 N-Channel Power MOSFET PDFN 5 6-8L ID V(BR)DSS RDS(on)TYP 6.2m @10V 100 V 80A 8.8m @4.5V DESCRIPTION The CJAC80SN10 uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEAT... See More ⇒
Detailed specifications: ASDM30N55E-R, ASDM30N65E-R, ASDM30P11TD-R, ASDM30P30CTD-R, ASDM40N52E-R, AUIRFN8405TR, CJAC100SN08U, CJAC110SN10A, 10N60, DMN3009LFVW-7, DMN3010LFG-7, DMN3016LPS-13, DMNH10H028SPSQ-13, DMNH4006SPSQ-13, DMP2002UPS-13, DMP22M2UPS-13, DMP3007SPS-13
Keywords - CJAC80SN10 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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