DMN3016LPS-13 Specs and Replacement

Type Designator: DMN3016LPS-13

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16.5 nS

Cossⓘ - Output Capacitance: 119 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: POWERDI5060-8

DMN3016LPS-13 substitution

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DMN3016LPS-13 datasheet

 ..1. Size:394K  1
dmn3016lps-13.pdf pdf_icon

DMN3016LPS-13

DMN3016LPS 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low On-Resistance ID Low Input Capacitance V(BR)DSS RDS(ON) max TA = +25 C Fast Switching Speed 12m @ VGS = 10V 10.8A ... See More ⇒

 4.1. Size:347K  diodes
dmn3016lps.pdf pdf_icon

DMN3016LPS-13

DMN3016LPS 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low On-Resistance ID Low Input Capacitance V(BR)DSS RDS(ON) max TA = +25 C Fast Switching Speed 12m @ VGS = 10V 10.8A ... See More ⇒

 6.1. Size:266K  diodes
dmn3016lfde.pdf pdf_icon

DMN3016LPS-13

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 6.2. Size:462K  diodes
dmn3016lk3.pdf pdf_icon

DMN3016LPS-13

DMN3016LK3 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switch (UIS) Test in Production ID V(BR)DSS RDS(on) Low On-Resistance TC = +25 C Fast Switching Speed 12m @ VGS = 10V 37.8A Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2) 30V 16m @ VGS = 4.5V 32.8A Halogen and Antimony Free. Green D... See More ⇒

Detailed specifications: ASDM30P30CTD-R, ASDM40N52E-R, AUIRFN8405TR, CJAC100SN08U, CJAC110SN10A, CJAC80SN10, DMN3009LFVW-7, DMN3010LFG-7, 2N7000, DMNH10H028SPSQ-13, DMNH4006SPSQ-13, DMP2002UPS-13, DMP22M2UPS-13, DMP3007SPS-13, DMP3010LPSQ-13, DMP3013SFV-13, DMP3013SFV-7

Keywords - DMN3016LPS-13 MOSFET specs

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 DMN3016LPS-13 replacement

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