All MOSFET. DMT31M6LPS-13 Datasheet

 

DMT31M6LPS-13 MOSFET. Datasheet pdf. Equivalent


   Type Designator: DMT31M6LPS-13
   Marking Code: T31M6LS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 150 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 123 nC
   trⓘ - Rise Time: 20.2 nS
   Cossⓘ - Output Capacitance: 3372 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: POWERDI5060-8

 DMT31M6LPS-13 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DMT31M6LPS-13 Datasheet (PDF)

 ..1. Size:421K  1
 dmt31m6lps-13.pdf

DMT31M6LPS-13 DMT31M6LPS-13

DMT31M6LPS GreenN-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) Minimizes On-State Losses ID Max Excellent Qgd x RDS(ON) Product (FOM) BVDSS RDS(ON) Max TC = +25C Advanced Technology for DC-DC Converters Small Form Factor Thermally Efficient Package Enables Higher 1.35m @ VGS = 10V 150A Density End

 4.1. Size:421K  diodes
 dmt31m6lps.pdf

DMT31M6LPS-13 DMT31M6LPS-13

DMT31M6LPS GreenN-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) Minimizes On-State Losses ID Max Excellent Qgd x RDS(ON) Product (FOM) BVDSS RDS(ON) Max TC = +25C Advanced Technology for DC-DC Converters Small Form Factor Thermally Efficient Package Enables Higher 1.35m @ VGS = 10V 150A Density End

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: APT1002RCN

 

 
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