HSBA4909 MOSFET. Datasheet pdf. Equivalent
Type Designator: HSBA4909
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Maximum Power Dissipation (Pd): 36 W
Maximum Drain-Source Voltage |Vds|: 40 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
Maximum Drain Current |Id|: 15 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 19 nC
Rise Time (tr): 2.2 nS
Drain-Source Capacitance (Cd): 176 pF
Maximum Drain-Source On-State Resistance (Rds): 0.008 Ohm
Package: PRPAK5X6
HSBA4909 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HSBA4909 Datasheet (PDF)
hsba4909.pdf
HSBA4909 N-Ch and P-Ch Fast Switching MOSFETs Description Product Summary The HSBA4909 is the high performance BVDSS RDSON ID complementary N-ch and P-ch MOSFETs with 40V 8m 15A high cell density, which provide excellent -40V 13m -15A RDSON and gate charge for most of the synchronous buck converter applications. The HSBA4909 meet the RoHS and Green Product requiremen
hsba4006.pdf
HSBA4006 N-Ch 40V Fast Switching MOSFETs Description Product Summary VDS 40 V The HSBA4006 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 7.5 m gate charge for most of the synchronous buck converter applications. ID 60 A The HSBA4006 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function rel
hsba4016.pdf
HSBA4016 N-Ch 40V Fast Switching MOSFETs Description Product Summary The HSBA4016 is the high cell density trenched N-VDS 40 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 6.5 m converter applications. ID 75 A The HSBA4016 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function relia
hsba4204.pdf
HSBA4204 Dual N-Ch 40V Fast Switching MOSFETs Description Product Summary The HSBA4204 is the high cell density trenched N-V 40 V DSch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 11.5 m DS(ON),typconverter applications. The HSBA4204 meet the RoHS and Green Product I 30 A Drequirement, 100% EAS guaranteed with full fu
hsba4094.pdf
HSBA4094 N-Ch 40V Fast Switching MOSFETs Product Summary General Description VDS 40 V 100% UIS Tested Advanced Trench Technology RDS(ON),typ 2.5 m Low Gate Charge High Current Capability ID 118 A RoHS and Halogen-Free Compliant 100% EAS Guaranteed Applications PRPAK5X6 Pin Configuration SMPS Synchronous Rectification DC/DC Conve
hsba4048.pdf
HSBA4048 N-Ch 40V Fast Switching MOSFETs Product Summary General Description V 40 V DS 100% UIS Tested Advanced Trench Technology R 1.8 m DS(ON),max Low Gate Charge High Current Capability I 100 A D RoHS and Halogen-Free Compliant Applications PRPAK5X6 Pin Configuration SMPS Synchronous Rectification DC/DC Converters Or-ing
hsba4115.pdf
HSBA4115 P-Ch 40V Fast Switching MOSFETs Description Product Summary The HSBA4115 is the high cell density trenched V -40 V DSP-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 10.5 m DS(ON),typconverter applications. I -52 A DThe HSBA4115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full functi
hsba4006.pdf
HSBA4006 N-Ch 40V Fast Switching MOSFETs Description Product Summary VDS 40 V The HSBA4006 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 7.5 m gate charge for most of the synchronous buck converter applications. ID 60 A The HSBA4006 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function rel
hsba4016.pdf
HSBA4016 N-Ch 40V Fast Switching MOSFETs Description Product Summary The HSBA4016 is the high cell density trenched N-VDS 40 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 6.5 m converter applications. ID 75 A The HSBA4016 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function relia
hsba4094.pdf
HSBA4094 N-Ch 40V Fast Switching MOSFETs Product Summary General Description VDS 40 V 100% UIS Tested Advanced Trench Technology RDS(ON),typ 2.5 m Low Gate Charge High Current Capability ID 118 A RoHS and Halogen-Free Compliant 100% EAS Guaranteed Applications PRPAK5X6 Pin Configuration SMPS Synchronous Rectification DC/DC Conve
hsba4048.pdf
HSBA4048 N-Ch 40V Fast Switching MOSFETs Product Summary General Description V 40 V DS 100% UIS Tested Advanced Trench Technology R 1.8 m DS(ON),max Low Gate Charge High Current Capability I 100 A D RoHS and Halogen-Free Compliant Applications PRPAK5X6 Pin Configuration SMPS Synchronous Rectification DC/DC Converters Or-ing
hsba4052.pdf
HSBA4052 N-Ch 40V Fast Switching MOSFETs Description Product Summary The HSBA4052 is the high cell density trenched N-VDS 40 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),typ 6.9 m converter applications. ID 50 A The HSBA4052 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function rel
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