HSBA4909. Аналоги и основные параметры

Наименование производителя: HSBA4909

Тип транзистора: MOSFET

Полярность: NP

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 36 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 15 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 2.2 ns

Cossⓘ - Выходная емкость: 176 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.008 Ohm

Тип корпуса: PRPAK5X6

Аналог (замена) для HSBA4909

- подборⓘ MOSFET транзистора по параметрам

 

HSBA4909 даташит

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HSBA4909

HSBA4909 N-Ch and P-Ch Fast Switching MOSFETs Description Product Summary The HSBA4909 is the high performance BVDSS RDSON ID complementary N-ch and P-ch MOSFETs with 40V 8m 15A high cell density, which provide excellent -40V 13m -15A RDSON and gate charge for most of the synchronous buck converter applications. The HSBA4909 meet the RoHS and Green Product requiremen

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hsba4006.pdfpdf_icon

HSBA4909

HSBA4006 N-Ch 40V Fast Switching MOSFETs Description Product Summary VDS 40 V The HSBA4006 is the high cell density trenched N- ch MOSFETs, which provide excellent RDSON and RDS(ON),max 7.5 m gate charge for most of the synchronous buck converter applications. ID 60 A The HSBA4006 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function rel

 9.2. Size:556K  1
hsba4016.pdfpdf_icon

HSBA4909

HSBA4016 N-Ch 40V Fast Switching MOSFETs Description Product Summary The HSBA4016 is the high cell density trenched N- VDS 40 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 6.5 m converter applications. ID 75 A The HSBA4016 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function relia

 9.3. Size:315K  1
hsba4204.pdfpdf_icon

HSBA4909

HSBA4204 Dual N-Ch 40V Fast Switching MOSFETs Description Product Summary The HSBA4204 is the high cell density trenched N- V 40 V DS ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 11.5 m DS(ON),typ converter applications. The HSBA4204 meet the RoHS and Green Product I 30 A D requirement, 100% EAS guaranteed with full fu

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