All MOSFET. HYG009N04LS1C2 Datasheet

 

HYG009N04LS1C2 Datasheet and Replacement


   Type Designator: HYG009N04LS1C2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 200 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 98 nS
   Cossⓘ - Output Capacitance: 1278 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00096 Ohm
   Package: PDFN5X6-8L
 

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HYG009N04LS1C2 Datasheet (PDF)

 ..1. Size:769K  1
 hyg009n04ls1c2.pdf pdf_icon

HYG009N04LS1C2

HYG009N04LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 40V/200A D D D D D D D D RDS(ON)= 0.75m (typ.) @VGS = 10V RDS(ON)= 1.05m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PDFN5*6-8L Applications Switching Application Power Manage

 9.1. Size:709K  1
 hyg007n03ls1c2.pdf pdf_icon

HYG009N04LS1C2

HYG007N03LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 30V/220A D D D D D D D D RDS(ON)= 0.63m (typ.) @VGS = 10V RDS(ON)= 0.96 m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PDFN5*6-8L Applications Switching Application Power Manag

Datasheet: HSBA6074 , HSBA6115 , HSBA6214 , HSBB3072 , HSBB6113 , HSBB6254 , HY1906C2 , HYG007N03LS1C2 , 2N60 , HYG011N04LS1C2 , HYG013N03LS1C2 , HYG015N04LS1C2 , HYG017N04LS1C2 , HYG019N04NR1C2 , HYG023N03LR1C2 , HYG025N04NA1C2 , HYG045N03LA1C1 .

History: IRFH7004TRPBF | NP75N055YUK | SSU80R850S | JST3401 | SD2932 | SML30J70 | SML20L100

Keywords - HYG009N04LS1C2 MOSFET datasheet

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