STM4635 MOSFET. Datasheet pdf. Equivalent
Type Designator: STM4635
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 2.5 W
Maximum Drain-Source Voltage |Vds|: 40 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 7 A
Total Gate Charge (Qg): 8 nC
Drain-Source Capacitance (Cd): 192 pF
Maximum Drain-Source On-State Resistance (Rds): 0.033 Ohm
Package: SOP8
STM4635 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STM4635 Datasheet (PDF)
stm4635.pdf
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STM4635aS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.33 @ VGS=-10VSuface Mount Package.-40V -7A50 @ VGS=-4.5VESD ProctecedD 5 4 G6 3D S7 2 SDS O-8D 8 1S1(TA=25C unless otherwise noted )ABS
stm4633.pdf
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STM4633aS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.33 @ VGS=-10VSuface Mount Package.-30V -7.0A52 @ VGS=-4.5VESD Protected.D 5 4 G6 3D S7 2D SS O-8D 8 1S1(TA=25C unless otherwise noted)AB
stm4637.pdf
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STM4637aS mHop Microelectronics C orp.Ver 1.1P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.30 @ VGS=-10VSuface Mount Package.-30V -7.7A48 @ VGS=-4.5VESD Protected.D 5 4 GD 6 3S7 2D SS O-88 1D S1(TA=25C unless otherwise noted)A
stm4639t.pdf
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GreenProductSTM4639TaS mHop Microelectronics C orp.Ver 1.1P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.12.5 @ VGS=-10VSuface Mount Package.-30V -10A16.5 @ VGS=-4.5V ESD Protected.D 5 4 G6 3D S7 2D SSO-8D 8 1S1ABSOLUTE MAXIMUM R
stm4639.pdf
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GreenProductSTM4639aS mHop Microelectronics C orp.Ver 2.1P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.8.5 @ VGS=-10VSuface Mount Package.-30V -14A13 @ VGS=-4.5VESD ProctecedD 5 4 G6 3D S7 2D SSO- 8D 8 1S1)ABSOLUTE MAXIMUM RA
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .