All MOSFET. HYG011N04LS1C2 Datasheet

 

HYG011N04LS1C2 Datasheet and Replacement


   Type Designator: HYG011N04LS1C2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 165 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 98 nS
   Cossⓘ - Output Capacitance: 1278 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm
   Package: PDFN5X6-8L
 

 HYG011N04LS1C2 substitution

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HYG011N04LS1C2 Datasheet (PDF)

 ..1. Size:775K  1
 hyg011n04ls1c2.pdf pdf_icon

HYG011N04LS1C2

HYG011N04LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 40V/165A D D D D D D D D RDS(ON)= 1.1m (typ.) @VGS = 10V RDS(ON)= 1.5m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PDFN5*6-8L Applications Switching Application Power Manageme

 9.1. Size:625K  1
 hyg017n04ls1c2.pdf pdf_icon

HYG011N04LS1C2

HYG017N04LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 40V/135A D D D D D D D D RDS(ON)= 1.7m (typ.) @VGS = 10V RDS(ON)= 2.3m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PDFN5*6-8L Applications Switching Application Power Manageme

 9.2. Size:638K  1
 hyg015n04ls1c2.pdf pdf_icon

HYG011N04LS1C2

HYG015N04LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 40V/150A D D D D D D D D RDS(ON)= 1.4m (typ.) @VGS = 10V RDS(ON)= 2.0m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PDFN5*6-8L Applications Switching Application Power Manageme

 9.3. Size:706K  1
 hyg013n03ls1c2.pdf pdf_icon

HYG011N04LS1C2

HYG013N03LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 30V/150A D D D D D D D D RDS(ON)= 1.3m (typ.) @VGS = 10V RDS(ON)= 2.0m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PDFN5*6-8L Applications Switching Application Power Manageme

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Datasheet: HSBA6115 , HSBA6214 , HSBB3072 , HSBB6113 , HSBB6254 , HY1906C2 , HYG007N03LS1C2 , HYG009N04LS1C2 , CS150N03A8 , HYG013N03LS1C2 , HYG015N04LS1C2 , HYG017N04LS1C2 , HYG019N04NR1C2 , HYG023N03LR1C2 , HYG025N04NA1C2 , HYG045N03LA1C1 , HYG055N08NS1C2 .

History: CHM6601JGP

Keywords - HYG011N04LS1C2 MOSFET datasheet

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