All MOSFET. HYG019N04NR1C2 Datasheet

 

HYG019N04NR1C2 Datasheet and Replacement


   Type Designator: HYG019N04NR1C2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 79 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 127 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 84 nS
   Cossⓘ - Output Capacitance: 596 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
   Package: PDFN5X6-8L
 

 HYG019N04NR1C2 substitution

   - MOSFET ⓘ Cross-Reference Search

 

HYG019N04NR1C2 Datasheet (PDF)

 ..1. Size:1326K  1
 hyg019n04nr1c2.pdf pdf_icon

HYG019N04NR1C2

HYG019N04NR1C2Single N-Channel Enhancement Mode MOSFETFeature Pin Description 40V/127AD D D DD D D DRDS(ON)= 2.0 m(typ.) @VGS = 10V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableG S S SS S S GPDFN8L(5x6)Applications Load Switch Battery ProtectionSingle N-Channel MOSFETOrdering and Marking InformationPackage Code

 9.1. Size:625K  1
 hyg017n04ls1c2.pdf pdf_icon

HYG019N04NR1C2

HYG017N04LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 40V/135A D D D D D D D D RDS(ON)= 1.7m (typ.) @VGS = 10V RDS(ON)= 2.3m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PDFN5*6-8L Applications Switching Application Power Manageme

 9.2. Size:638K  1
 hyg015n04ls1c2.pdf pdf_icon

HYG019N04NR1C2

HYG015N04LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 40V/150A D D D D D D D D RDS(ON)= 1.4m (typ.) @VGS = 10V RDS(ON)= 2.0m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PDFN5*6-8L Applications Switching Application Power Manageme

 9.3. Size:706K  1
 hyg013n03ls1c2.pdf pdf_icon

HYG019N04NR1C2

HYG013N03LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 30V/150A D D D D D D D D RDS(ON)= 1.3m (typ.) @VGS = 10V RDS(ON)= 2.0m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PDFN5*6-8L Applications Switching Application Power Manageme

SHOW MORE

Datasheet: HSBB6254 , HY1906C2 , HYG007N03LS1C2 , HYG009N04LS1C2 , HYG011N04LS1C2 , HYG013N03LS1C2 , HYG015N04LS1C2 , HYG017N04LS1C2 , IRF830 , HYG023N03LR1C2 , HYG025N04NA1C2 , HYG045N03LA1C1 , HYG055N08NS1C2 , HYG072N10LS1C2 , HYG110P04LQ2C2 , IPLK60R1K0PFD7 , IPLK60R1K5PFD7 .

History: JCS9N90BT | HYG015N04LS1C2 | IRFH5300TRPBF | NVMFD024N06CT1G | KTK5134S | SI4558DY | CS3410B4

Keywords - HYG019N04NR1C2 MOSFET datasheet

 HYG019N04NR1C2 cross reference
 HYG019N04NR1C2 equivalent finder
 HYG019N04NR1C2 lookup
 HYG019N04NR1C2 substitution
 HYG019N04NR1C2 replacement

 

 
Back to Top

 


 
.