HYG019N04NR1C2 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: HYG019N04NR1C2
Маркировка: G019N04
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 79 W
Предельно допустимое напряжение сток-исток |Uds|: 40 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 127 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 72.4 nC
Время нарастания (tr): 84 ns
Выходная емкость (Cd): 596 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0025 Ohm
Тип корпуса: PDFN5X6-8L
Аналог (замена) для HYG019N04NR1C2
HYG019N04NR1C2 Datasheet (PDF)
hyg019n04nr1c2.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
HYG019N04NR1C2Single N-Channel Enhancement Mode MOSFETFeature Pin Description 40V/127AD D D DD D D DRDS(ON)= 2.0 m(typ.) @VGS = 10V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableG S S SS S S GPDFN8L(5x6)Applications Load Switch Battery ProtectionSingle N-Channel MOSFETOrdering and Marking InformationPackage Code
hyg017n04ls1c2.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
HYG017N04LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 40V/135A D D D D D D D D RDS(ON)= 1.7m (typ.) @VGS = 10V RDS(ON)= 2.3m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PDFN5*6-8L Applications Switching Application Power Manageme
hyg015n04ls1c2.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
HYG015N04LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 40V/150A D D D D D D D D RDS(ON)= 1.4m (typ.) @VGS = 10V RDS(ON)= 2.0m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PDFN5*6-8L Applications Switching Application Power Manageme
hyg013n03ls1c2.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
HYG013N03LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 30V/150A D D D D D D D D RDS(ON)= 1.3m (typ.) @VGS = 10V RDS(ON)= 2.0m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PDFN5*6-8L Applications Switching Application Power Manageme
hyg011n04ls1c2.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
HYG011N04LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 40V/165A D D D D D D D D RDS(ON)= 1.1m (typ.) @VGS = 10V RDS(ON)= 1.5m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PDFN5*6-8L Applications Switching Application Power Manageme
hyg018n10ns1b6.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
HYG018N10NS1B6 N-Channel Enhancement Mode MOSFET Feature Pin Description 100V/322A RDS(ON)=1.4m(typ.)@VGS=10V 100% Avalanche Tested Pin 7 Reliable and Rugged Halogen-Free and Green Devices Available Pin 1 Pin1(RoHS Compliant) TO-263-6L TO-263-6L Applications Energy Storage Pin 1 Battery Protection Battery Operated Tools Pin 2
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .