HYG055N08NS1C2 Specs and Replacement
Type Designator: HYG055N08NS1C2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 83.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 85 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 89 nS
Cossⓘ - Output Capacitance: 1540 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: PPAK5X6-8L
HYG055N08NS1C2 substitution
- MOSFET ⓘ Cross-Reference Search
HYG055N08NS1C2 datasheet
hyg055n08ns1c2.pdf
HYG055N08NS1C2 N-Channel Enhancement Mode MOSFET Feature Pin Description 80V/85A D D D D D D D D RDS(ON)=4.8 m (typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Halogen-Free Devices Available (RoHS Compliant) S S S G G S S S Pin1 PPAK5*6 8L - Applications Switching application Power management for inverter systems Motor contr... See More ⇒
hyg055n08ns1p hyg055n08ns1b.pdf
HYG055N08NS1P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 80V/120A RDS(ON)=5.3 m (typ.)@VGS = 10V 100% Avalanche Tested S Reliable and Rugged D G Lead-Free and Green Devices Available S D G (RoHS Compliant) TO-220FB-3L TO-263-2L Applications Switching application Power management for inverter systems Motor control N... See More ⇒
hyg053n10ns1p hyg053n10ns1b.pdf
HYG053N10NS1P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 100V/120A RDS(ON)=4.8 m (typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Halogen-Free Devices Available (RoHS Compliant) TO-220FB-3L TO-263-2L Applications Switching application Power management for inverter systems Battery management N-Channel MOSFET ... See More ⇒
hyg050n08ns1p hyg050n08ns1b.pdf
HYG050N08NS1P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 80V/130A RDS(ON)= 4 m (typ.)@VGS = 10V 100% Avalanche Tested S Reliable and Rugged D G Lead-Free and Green Devices Available S D G (RoHS Compliant) TO-220FB-3L TO-263-2L Applications Switching application Power management for inverter systems Motor control N-Chan... See More ⇒
Detailed specifications: HYG011N04LS1C2, HYG013N03LS1C2, HYG015N04LS1C2, HYG017N04LS1C2, HYG019N04NR1C2, HYG023N03LR1C2, HYG025N04NA1C2, HYG045N03LA1C1, AO3400A, HYG072N10LS1C2, HYG110P04LQ2C2, IPLK60R1K0PFD7, IPLK60R1K5PFD7, IPLK60R360PFD7, IPLK60R600PFD7, IRFH3707TRPBF, IRFH5006TRPBF
Keywords - HYG055N08NS1C2 MOSFET specs
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