All MOSFET. HYG072N10LS1C2 Datasheet

 

HYG072N10LS1C2 Datasheet and Replacement


   Type Designator: HYG072N10LS1C2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 19.6 nS
   Cossⓘ - Output Capacitance: 497 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: PPAK5X6-8L
 

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HYG072N10LS1C2 Datasheet (PDF)

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HYG072N10LS1C2

HYG072N10LS1C2Single N-Channel Enhancement Mode MOSFETFeature Pin DescriptionD D D DD D D D 100V/80ARDS(ON)= 6.0 m (typ.) @ VGS = 10VRDS(ON)= 8.8 m (typ.) @ VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableS S S G G S S S(RoHS Compliant)PPAK5*6-8LPin1Applications High Frequency Point-of-Load Synchronous Buck C

Datasheet: HYG013N03LS1C2 , HYG015N04LS1C2 , HYG017N04LS1C2 , HYG019N04NR1C2 , HYG023N03LR1C2 , HYG025N04NA1C2 , HYG045N03LA1C1 , HYG055N08NS1C2 , IRF730 , HYG110P04LQ2C2 , IPLK60R1K0PFD7 , IPLK60R1K5PFD7 , IPLK60R360PFD7 , IPLK60R600PFD7 , IRFH3707TRPBF , IRFH5006TRPBF , IRFH5010TRPBF .

History: IPI70N04S4-06 | KND3306B | WSP4805 | IRFR9024NPBF | CEU6861 | WSF07N10 | MSB22A04Q8

Keywords - HYG072N10LS1C2 MOSFET datasheet

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