HYG072N10LS1C2 Specs and Replacement

Type Designator: HYG072N10LS1C2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19.6 nS

Cossⓘ - Output Capacitance: 497 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: PPAK5X6-8L

HYG072N10LS1C2 substitution

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HYG072N10LS1C2 datasheet

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HYG072N10LS1C2

HYG072N10LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Pin Description D D D D D D D D 100V/80A RDS(ON)= 6.0 m (typ.) @ VGS = 10V RDS(ON)= 8.8 m (typ.) @ VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available S S S G G S S S (RoHS Compliant) PPAK5*6-8L Pin1 Applications High Frequency Point-of-Load Synchronous Buck C... See More ⇒

Detailed specifications: HYG013N03LS1C2, HYG015N04LS1C2, HYG017N04LS1C2, HYG019N04NR1C2, HYG023N03LR1C2, HYG025N04NA1C2, HYG045N03LA1C1, HYG055N08NS1C2, IRFB31N20D, HYG110P04LQ2C2, IPLK60R1K0PFD7, IPLK60R1K5PFD7, IPLK60R360PFD7, IPLK60R600PFD7, IRFH3707TRPBF, IRFH5006TRPBF, IRFH5010TRPBF

Keywords - HYG072N10LS1C2 MOSFET specs

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