FDP060AN08A0 MOSFET. Datasheet pdf. Equivalent
Type Designator: FDP060AN08A0
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 255 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 73 nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: TO220
FDP060AN08A0 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDP060AN08A0 Datasheet (PDF)
fdb060an08a0 fdp060an08a0.pdf
November 2002FDB060AN08A0 / FDP060AN08A0N-Channel PowerTrench MOSFET75V, 80A, 6.0mFeatures Applications rDS(ON) = 4.8m (Typ.), VGS = 10V, ID = 80A 42V Automotive Load Control Qg(tot) = 73nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low QRR Body Diode Electronic Valve Train Systems U
fdp060an08a0 fdb060an08a0.pdf
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fdp060an08a0.pdf
isc N-Channel MOSFET Transistor FDP060AN08A0FEATURESWith TO-220 packagingDrain Source Voltage-: V 75VDSSStatic drain-source on-resistance:RDS(on) 6m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25
Datasheet: FDP045N10AF102 , STM4637 , FDP047N08 , FDP047N10 , STM4635 , FDP050AN06A0 , FDP054N10 , STM4633 , IRFB7545 , FDP075N15AF102 , FDP083N15AF102 , FDP085N10AF102 , STM4615 , FDP090N10 , STM4605 , FDP100N10 , STM4550 .
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918