All MOSFET. JSM3622 Datasheet

 

JSM3622 Datasheet and Replacement


   Type Designator: JSM3622
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: PDFN3333-8
 

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JSM3622 Datasheet (PDF)

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JSM3622

JSM3622N -CHANNEL ENHANCEMENT MODE POWER MOSFETDescription D1 D2The JSM3622 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G1 G2voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. S1 S2Schematic diagram General Feature VDS =30V,ID =25A RDS(ON) Typ

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JSM3622

JSM36326N-Channel Enhancement Mode Power MOSFETN-Channel Enhancement Mode Power MOSFET 28V N-Channel MOSFETDFN 3x3_EPPRODUCT SUMMARYTop View Bottom ViewVDS (V) = 28VID = 12A (VGS = 10V)RDS(ON)

Datasheet: JMSL0406AG , JMSL0606AG , JMTG040N03A , JMTG3002B , JMTQ35N06A , JMTQ55P02A , JSM2050 , JSM2622 , IRF3710 , JSM36326 , JSM6435 , JSM6764 , JSM7240 , JSM7409 , JSM7409B , JSM7410 , JSM7788 .

History: WMQ30N04TS | IRFB830 | IXTP5N60P | HSBA3094 | RF1S40N10LESM | IPN70R2K0P7S | SIS862DN

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