JSM3622 MOSFET. Datasheet pdf. Equivalent
Type Designator: JSM3622
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 25 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 14.2 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 75 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: PDFN3333-8
JSM3622 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
JSM3622 Datasheet (PDF)
jsm3622.pdf
JSM3622N -CHANNEL ENHANCEMENT MODE POWER MOSFETDescription D1 D2The JSM3622 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G1 G2voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. S1 S2Schematic diagram General Feature VDS =30V,ID =25A RDS(ON) Typ
jsm36326.pdf
JSM36326N-Channel Enhancement Mode Power MOSFETN-Channel Enhancement Mode Power MOSFET 28V N-Channel MOSFETDFN 3x3_EPPRODUCT SUMMARYTop View Bottom ViewVDS (V) = 28VID = 12A (VGS = 10V)RDS(ON)
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