FDP083N15AF102
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDP083N15AF102
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 294
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 75
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 64.5
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0083
Ohm
Package:
TO220
FDP083N15AF102
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDP083N15AF102
Datasheet (PDF)
4.1. Size:766K fairchild semi
fdp083n15a.pdf 
November 2013FDP083N15AN-Channel PowerTrench MOSFET150 V, 117 A, 8.3 mFeatures Description RDS(on) = 6.85 m ( Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors PowerTrench process that has been tailored to mini- Fast Switching Speedmize the on-state resistance while maintaining superiorswitching performance. L
4.2. Size:399K fairchild semi
fdp083n15a f102.pdf
March 2013FDP083N15A _F102 N-Channel PowerTrench MOSFET 150 V, 117 A, 8.3 mFeatures Description RDS(on) = 6.85 m ( Typ.)@ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has Fast Switching Speedbeen tailored to minimize the on-state resistance while maintain-ing superior switching perfo
4.3. Size:735K onsemi
fdp083n15a.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
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