FDP083N15AF102 PDF Specs and Replacement
Type Designator: FDP083N15AF102
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 294 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0083 Ohm
Package: TO220
FDP083N15AF102 substitution
FDP083N15AF102 PDF Specs
fdp083n15a.pdf
November 2013 FDP083N15A N-Channel PowerTrench MOSFET 150 V, 117 A, 8.3 m Features Description RDS(on) = 6.85 m ( Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s PowerTrench process that has been tailored to mini- Fast Switching Speed mize the on-state resistance while maintaining superior switching performance. L... See More ⇒
fdp083n15a f102.pdf
March 2013 FDP083N15A _F102 N-Channel PowerTrench MOSFET 150 V, 117 A, 8.3 m Features Description RDS(on) = 6.85 m ( Typ.)@ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has Fast Switching Speed been tailored to minimize the on-state resistance while maintain- ing superior switching perfo... See More ⇒
fdp083n15a.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Detailed specifications: FDP047N08 , FDP047N10 , STM4635 , FDP050AN06A0 , FDP054N10 , STM4633 , FDP060AN08A0 , FDP075N15AF102 , MMIS60R580P , FDP085N10AF102 , STM4615 , FDP090N10 , STM4605 , FDP100N10 , STM4550 , FDP10N60NZ , STM4532 .
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