FDP083N15AF102 Datasheet. Specs and Replacement

Type Designator: FDP083N15AF102  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 294 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0083 Ohm

Package: TO220

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FDP083N15AF102 datasheet

 4.1. Size:766K  fairchild semi
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FDP083N15AF102

November 2013 FDP083N15A N-Channel PowerTrench MOSFET 150 V, 117 A, 8.3 m Features Description RDS(on) = 6.85 m ( Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s PowerTrench process that has been tailored to mini- Fast Switching Speed mize the on-state resistance while maintaining superior switching performance. L... See More ⇒

 4.2. Size:399K  fairchild semi
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FDP083N15AF102

March 2013 FDP083N15A _F102 N-Channel PowerTrench MOSFET 150 V, 117 A, 8.3 m Features Description RDS(on) = 6.85 m ( Typ.)@ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has Fast Switching Speed been tailored to minimize the on-state resistance while maintain- ing superior switching perfo... See More ⇒

 4.3. Size:735K  onsemi
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FDP083N15AF102

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Detailed specifications: FDP047N08, FDP047N10, STM4635, FDP050AN06A0, FDP054N10, STM4633, FDP060AN08A0, FDP075N15AF102, IRFB3206, FDP085N10AF102, STM4615, FDP090N10, STM4605, FDP100N10, STM4550, FDP10N60NZ, STM4532

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