MCAC30N06Y-TP PDF and Equivalents Search

 

MCAC30N06Y-TP Specs and Replacement

Type Designator: MCAC30N06Y-TP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 192 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: DFN5060

MCAC30N06Y-TP substitution

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MCAC30N06Y-TP datasheet

 ..1. Size:920K  1
 mcac30n06y-tp.pdf pdf_icon

MCAC30N06Y-TP

MCAC30N06Y Electrical Characteristics @ 25 C (Unless OtherwiseSpecified) Parameter Symbol Test conditions Min Typ Max Unit Static Parameter V(BR)DSS VGS=0V, ID=250 A Drain-Source Breakdown Voltage 60 V VGS(th) VDS=VGS, ID=250 A 1.0 1.5 2.5 V Gate-Threshold Voltage(Note 3) IGSS Gate-Body Leakage VDS=0V, VGS= 20V 100 nA IDSS VDS=60V, VGS=0V Zero Gate Voltage Drain Current 1 A... See More ⇒

 4.1. Size:920K  mcc
 mcac30n06y.pdf pdf_icon

MCAC30N06Y-TP

MCAC30N06Y Electrical Characteristics @ 25 C (Unless OtherwiseSpecified) Parameter Symbol Test conditions Min Typ Max Unit Static Parameter V(BR)DSS VGS=0V, ID=250 A Drain-Source Breakdown Voltage 60 V VGS(th) VDS=VGS, ID=250 A 1.0 1.5 2.5 V Gate-Threshold Voltage(Note 3) IGSS Gate-Body Leakage VDS=0V, VGS= 20V 100 nA IDSS VDS=60V, VGS=0V Zero Gate Voltage Drain Current 1 A... See More ⇒

Detailed specifications: JSM7410, JSM7788, KCY3008A, KCY3310A, KNY3403B, LSGNE03R098WB, MCAC10H03-TP, MCAC16N03-TP, STP75NF75, MCAC40N10YA-TP, MCAC50N06Y-TP, MCAC50N10Y-TP, MCAC60N08Y-TP, MCAC75N02-TP, MCAC80N045Y-TP, MCG10P03-TP, MCG30N03-TP

Keywords - MCAC30N06Y-TP MOSFET specs

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