MSK100N03DF PDF and Equivalents Search

 

MSK100N03DF Specs and Replacement

Type Designator: MSK100N03DF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: DFN3X3-8L

MSK100N03DF substitution

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MSK100N03DF datasheet

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MSK100N03DF

www.msksemi.com MSK100N03DF Semiconductor Compiance Description The MSK100N03DF uses advanced trench technology D D D D to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. S S S G General Features DFN3X3-8L VDS = 30V ID =100A RDS(ON) ... See More ⇒

Detailed specifications: MCAC75N02-TP, MCAC80N045Y-TP, MCG10P03-TP, MCG30N03-TP, ME7114S, ME7170, MEE7816S, MSJAC11N65Y-TP, AON7410, MSK20P80GNF, MSK30N03DF, MSK30P02DF, MSK3419DF, MSK50N03DF, MSK50P03NF, MSK60N03DF, MSK7804

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