All MOSFET. MSK100N03DF Datasheet

 

MSK100N03DF Datasheet and Replacement


   Type Designator: MSK100N03DF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: DFN3X3-8L
 

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MSK100N03DF Datasheet (PDF)

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MSK100N03DF

www.msksemi.comMSK100N03DFSemiconductorCompianceDescriptionThe MSK100N03DF uses advanced trench technologyD D D Dto provide excellent RDS(ON), low gate charge andoperation with gate voltages as low as 4.5V. Thisdevice is suitable for use as aBattery protection or in other Switching application.S S S GGeneral FeaturesDFN3X3-8LVDS = 30V ID =100ARDS(ON)

Datasheet: MCAC75N02-TP , MCAC80N045Y-TP , MCG10P03-TP , MCG30N03-TP , ME7114S , ME7170 , MEE7816S , MSJAC11N65Y-TP , RFP50N06 , MSK20P80GNF , MSK30N03DF , MSK30P02DF , MSK3419DF , MSK50N03DF , MSK50P03NF , MSK60N03DF , MSK7804 .

History: 2SK962-01

Keywords - MSK100N03DF MOSFET datasheet

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