MSK30N03DF MOSFET Datasheet: P-Ch, 30V, 30A. Full specification with pinout and replacement list

MSK30N03DF Specs and Replacement

Type Designator: MSK30N03DF

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9.8 nS

Cossⓘ - Output Capacitance: 81 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: DFN3X3-8L

MSK30N03DF substitution

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MSK30N03DF datasheet

..1. Size:5063K 1
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www.msksemi.com MSK30N03DF Semiconductor Compiance Description The MSK30N03DF uses advanced trench technology D D D D to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a S S S G Battery protection or in other Switching application. DFN3X3-8L General Features V = 30V I =30 A DS D R ... See More ⇒

9.1. Size:487K 1
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www.msksemi.com MSK30P02DF Semiconductor Compiance Description The MSK30P02DF is the high cell density trenched D D D D P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The MSK30P02DF meet the RoHS and Green S S S G Product requirement with full function reliability approved. DFN3X3-8L Product Summary BVDSS RDS... See More ⇒

Detailed specifications: MCG10P03-TP, MCG30N03-TP, ME7114S, ME7170, MEE7816S, MSJAC11N65Y-TP, MSK100N03DF, MSK20P80GNF, 5N65, MSK30P02DF, MSK3419DF, MSK50N03DF, MSK50P03NF, MSK60N03DF, MSK7804, MSK80N03NF, NTMFD5875NLT1G