www.msksemi.comMSK30N03DFSemiconductorCompianceDescription The MSK30N03DF uses advanced trench technology D D D D to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a S S S G Battery protection or in other Switching application. DFN3X3-8LGeneral Features V = 30V I =30 A DS DR

www.msksemi.comMSK30P02DFSemiconductorCompianceDescriptionThe MSK30P02DF is the high cell density trenchedD D D DP-ch MOSFETs, which provide excellentRDSON and gate charge for most of thesynchronous buck converter applications.The MSK30P02DF meet the RoHS and GreenS S S GProduct requirement with full function reliabilityapproved.DFN3X3-8LProduct SummaryBVDSS RDS