MSK50P03NF Specs and Replacement
Type Designator: MSK50P03NF
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 37 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 215 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: DFN5X6-8L
MSK50P03NF substitution
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MSK50P03NF datasheet
msk50p03nf.pdf
www.msksemi.com MSK50P03NF Semiconductor Compiance Description The MSK50P03NF uses advanced trench technology excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as aload switch or in PWM applications. General Features VDS = -30V,ID = -50A RDS(ON) ... See More ⇒
msk50n03df.pdf
www.msksemi.com MSK50N03DF Semiconductor Compiance Description D D D D The MSK50N03DF is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. S S S G The MSK50N03DF meet the RoHS and Green DFN3X3-8L Product Summary BVDSS RDSON ID 30V 46A 9.5m Green Device Available Super Low Gate ... See More ⇒
Detailed specifications: MEE7816S, MSJAC11N65Y-TP, MSK100N03DF, MSK20P80GNF, MSK30N03DF, MSK30P02DF, MSK3419DF, MSK50N03DF, IRF530, MSK60N03DF, MSK7804, MSK80N03NF, NTMFD5875NLT1G, NTMFD5C466NLT1G, NTMFD5C466NT1G, NTMFD5C470NLT1G, NTMFD5C650NLT1G
Keywords - MSK50P03NF MOSFET specs
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