All MOSFET. NTMFD6H840NLT1G Datasheet

 

NTMFD6H840NLT1G MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTMFD6H840NLT1G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 90 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 74 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 32 nC
   trⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 249 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0069 Ohm
   Package: DFN8-5X6

 NTMFD6H840NLT1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTMFD6H840NLT1G Datasheet (PDF)

 0.1. Size:126K  1
 ntmfd6h840nlt1g.pdf

NTMFD6H840NLT1G NTMFD6H840NLT1G

NTMFD6H840NLPower MOSFET80 V, 6.9 mW, 74 A, Dual N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)6.9 mW @ 10 VParame

 2.1. Size:126K  onsemi
 ntmfd6h840nl.pdf

NTMFD6H840NLT1G NTMFD6H840NLT1G

NTMFD6H840NLPower MOSFET80 V, 6.9 mW, 74 A, Dual N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)6.9 mW @ 10 VParame

 5.1. Size:202K  1
 ntmfd6h846nlt1g.pdf

NTMFD6H840NLT1G NTMFD6H840NLT1G

MOSFET - Power, DualN-Channel80 V, 15 mW, 31 ANTMFD6H846NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant15 mW @ 10 V80 V31 AMAXIMUM RATINGS (TJ = 25C unless otherwise n

 5.2. Size:202K  onsemi
 ntmfd6h846nl.pdf

NTMFD6H840NLT1G NTMFD6H840NLT1G

MOSFET - Power, DualN-Channel80 V, 15 mW, 31 ANTMFD6H846NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant15 mW @ 10 V80 V31 AMAXIMUM RATINGS (TJ = 25C unless otherwise n

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: CS64N90F

 

 
Back to Top