Справочник MOSFET. NTMFD6H840NLT1G

 

NTMFD6H840NLT1G Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NTMFD6H840NLT1G
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 90 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 74 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 34 ns
   Cossⓘ - Выходная емкость: 249 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0069 Ohm
   Тип корпуса: DFN8-5X6
 

 Аналог (замена) для NTMFD6H840NLT1G

   - подбор ⓘ MOSFET транзистора по параметрам

 

NTMFD6H840NLT1G Datasheet (PDF)

 0.1. Size:126K  1
 ntmfd6h840nlt1g.pdf pdf_icon

NTMFD6H840NLT1G

NTMFD6H840NLPower MOSFET80 V, 6.9 mW, 74 A, Dual N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)6.9 mW @ 10 VParame

 2.1. Size:126K  onsemi
 ntmfd6h840nl.pdf pdf_icon

NTMFD6H840NLT1G

NTMFD6H840NLPower MOSFET80 V, 6.9 mW, 74 A, Dual N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)6.9 mW @ 10 VParame

 5.1. Size:202K  1
 ntmfd6h846nlt1g.pdf pdf_icon

NTMFD6H840NLT1G

MOSFET - Power, DualN-Channel80 V, 15 mW, 31 ANTMFD6H846NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant15 mW @ 10 V80 V31 AMAXIMUM RATINGS (TJ = 25C unless otherwise n

 5.2. Size:202K  onsemi
 ntmfd6h846nl.pdf pdf_icon

NTMFD6H840NLT1G

MOSFET - Power, DualN-Channel80 V, 15 mW, 31 ANTMFD6H846NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant15 mW @ 10 V80 V31 AMAXIMUM RATINGS (TJ = 25C unless otherwise n

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... MSK7804 , MSK80N03NF , NTMFD5875NLT1G , NTMFD5C466NLT1G , NTMFD5C466NT1G , NTMFD5C470NLT1G , NTMFD5C650NLT1G , NTMFD5C674NLT1G , STF13NM60N , NTMFD6H846NLT1G , NTMFS006N12MCT1G , NTMFS008N12MCT1G , NTMFS015N10MCLT1G , NTMFS0D8N02P1ET1G , NTMFS0D9N03CGT1G , NTMFS1D15N03CGT1G , NTMFS1D7N03CGT1G .

History: STF32N65M5 | IXTH90P10P | 2SK1206

 

 
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