NTMFS015N10MCLT1G Specs and Replacement
Type Designator: NTMFS015N10MCLT1G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 79 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 54 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ -
Output Capacitance: 521 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0122 Ohm
Package: DFN5
NTMFS015N10MCLT1G substitution
- MOSFET ⓘ Cross-Reference Search
NTMFS015N10MCLT1G datasheet
7.1. Size:137K onsemi
ntmfs016n06c.pdf 
MOSFET- Power, Single N-Channel, SO-8FL 60 V, 15.6 mW, 33 A NTMFS016N06C Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 60 V 15.6 mW @ 10 V 33 A Applications... See More ⇒
8.1. Size:187K 1
ntmfs0d8n02p1et1g.pdf
MOSFET - Power, Single N-Channel, SO8-FL 25 V, 0.68 mW, 365 A NTMFS0D8N02P1E Features Small Footprint (5x6mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 0.68 mW @ 10 V 25 V 365 A Applic... See More ⇒
8.2. Size:176K 1
ntmfs0d9n03cgt1g.pdf
MOSFET - Power, Single N-Channel, SO8-FL 30 V, 0.9 mW, 298 A NTMFS0D9N03CG Features www.onsemi.com Advanced Package (5x6mm) with Excellent Thermal Conduction Ultra Low RDS(on) to Improve System Efficiency These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 30 V 0.9 mW @ 10 V 298 A Applications Hot Swap Application D (... See More ⇒
8.3. Size:185K 1
ntmfs006n12mct1g.pdf
MOSFET - Power, Single N-Channel 120 V, 6.0 mW, 93 A NTMFS006N12MC Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX Soft Body Diode Reduces Voltage Ringing 6.0 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are ... See More ⇒
8.4. Size:200K 1
ntmfs008n12mct1g.pdf
ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,... See More ⇒
8.5. Size:178K onsemi
ntmfs020n06c.pdf
MOSFET- Power, Single N-Channel, SO8FL 60 V, 19.6 mW, 28 A NTMFS020N06C Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 60 V 19.6 mW @ 10 V 28 A Applications ... See More ⇒
8.6. Size:187K onsemi
ntmfs0d8n02p1e.pdf
MOSFET - Power, Single N-Channel, SO8-FL 25 V, 0.68 mW, 365 A NTMFS0D8N02P1E Features Small Footprint (5x6mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 0.68 mW @ 10 V 25 V 365 A Applic... See More ⇒
8.7. Size:169K onsemi
ntmfs0d55n03cg.pdf
MOSFET - Power, Single N-Channel, SO8-FL 30 V, 0.58 mW, 462 A NTMFS0D55N03CG Features Wide SOA to Improve Inrush Current Management www.onsemi.com Advanced Package (5x6mm) with Excellent Thermal Conduction Ultra Low RDS(on) to Improve System Efficiency V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 30 V 0.58 mW @ 1... See More ⇒
8.8. Size:1406K onsemi
ntmfs08n003c.pdf
www.onsemi.com NTMFS08N003C N-Channel Shielded Gate PowerTrench MOSFET 80 V, 147 A, 3.1 m Features General Description Shielded Gate MOSFET Technology This N-Channel MV MOSFET is produced using ON Semiconductor s advanced PowerTrench process that Max rDS(on) = 3.1 m at VGS = 10 V, ID = 56 A incorporates Shielded Gate technology. This process has been Max rDS(on) = 8.1 m... See More ⇒
8.10. Size:176K onsemi
ntmfs0d9n03cg.pdf
MOSFET - Power, Single N-Channel, SO8-FL 30 V, 0.9 mW, 298 A NTMFS0D9N03CG Features www.onsemi.com Advanced Package (5x6mm) with Excellent Thermal Conduction Ultra Low RDS(on) to Improve System Efficiency These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 30 V 0.9 mW @ 10 V 298 A Applications Hot Swap Application D (... See More ⇒
Detailed specifications: NTMFD5C466NT1G, NTMFD5C470NLT1G, NTMFD5C650NLT1G, NTMFD5C674NLT1G, NTMFD6H840NLT1G, NTMFD6H846NLT1G, NTMFS006N12MCT1G, NTMFS008N12MCT1G, 5N60, NTMFS0D8N02P1ET1G, NTMFS0D9N03CGT1G, NTMFS1D15N03CGT1G, NTMFS1D7N03CGT1G, NTMFS23D9N06HLT1G, NTMFS3D6N10MCLT1G, NTMFS4C05NT1G, NTMFS4D2N10MDT1G
Keywords - NTMFS015N10MCLT1G MOSFET specs
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NTMFS015N10MCLT1G replacement
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