NTMFS0D9N03CGT1G PDF and Equivalents Search

 

NTMFS0D9N03CGT1G Specs and Replacement

Type Designator: NTMFS0D9N03CGT1G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 144 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 298 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 4306 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0009 Ohm

Package: SO8

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NTMFS0D9N03CGT1G datasheet

 0.1. Size:176K  1
 ntmfs0d9n03cgt1g.pdf pdf_icon

NTMFS0D9N03CGT1G

MOSFET - Power, Single N-Channel, SO8-FL 30 V, 0.9 mW, 298 A NTMFS0D9N03CG Features www.onsemi.com Advanced Package (5x6mm) with Excellent Thermal Conduction Ultra Low RDS(on) to Improve System Efficiency These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 30 V 0.9 mW @ 10 V 298 A Applications Hot Swap Application D (... See More ⇒

 1.1. Size:176K  onsemi
 ntmfs0d9n03cg.pdf pdf_icon

NTMFS0D9N03CGT1G

MOSFET - Power, Single N-Channel, SO8-FL 30 V, 0.9 mW, 298 A NTMFS0D9N03CG Features www.onsemi.com Advanced Package (5x6mm) with Excellent Thermal Conduction Ultra Low RDS(on) to Improve System Efficiency These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 30 V 0.9 mW @ 10 V 298 A Applications Hot Swap Application D (... See More ⇒

 7.1. Size:187K  1
 ntmfs0d8n02p1et1g.pdf pdf_icon

NTMFS0D9N03CGT1G

MOSFET - Power, Single N-Channel, SO8-FL 25 V, 0.68 mW, 365 A NTMFS0D8N02P1E Features Small Footprint (5x6mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 0.68 mW @ 10 V 25 V 365 A Applic... See More ⇒

 7.2. Size:187K  onsemi
 ntmfs0d8n02p1e.pdf pdf_icon

NTMFS0D9N03CGT1G

MOSFET - Power, Single N-Channel, SO8-FL 25 V, 0.68 mW, 365 A NTMFS0D8N02P1E Features Small Footprint (5x6mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 0.68 mW @ 10 V 25 V 365 A Applic... See More ⇒

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Detailed specifications: NTMFD5C650NLT1G, NTMFD5C674NLT1G, NTMFD6H840NLT1G, NTMFD6H846NLT1G, NTMFS006N12MCT1G, NTMFS008N12MCT1G, NTMFS015N10MCLT1G, NTMFS0D8N02P1ET1G, SI2302, NTMFS1D15N03CGT1G, NTMFS1D7N03CGT1G, NTMFS23D9N06HLT1G, NTMFS3D6N10MCLT1G, NTMFS4C05NT1G, NTMFS4D2N10MDT1G, NTMFS5C404NLTT1G, NTMFS5C404NT3G

Keywords - NTMFS0D9N03CGT1G MOSFET specs

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