Справочник MOSFET. NTMFS0D9N03CGT1G

 

NTMFS0D9N03CGT1G Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NTMFS0D9N03CGT1G
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 144 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 298 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 16 ns
   Cossⓘ - Выходная емкость: 4306 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0009 Ohm
   Тип корпуса: SO8
 

 Аналог (замена) для NTMFS0D9N03CGT1G

   - подбор ⓘ MOSFET транзистора по параметрам

 

NTMFS0D9N03CGT1G Datasheet (PDF)

 0.1. Size:176K  1
 ntmfs0d9n03cgt1g.pdf pdf_icon

NTMFS0D9N03CGT1G

MOSFET - Power, SingleN-Channel, SO8-FL30 V, 0.9 mW, 298 ANTMFS0D9N03CGFeatureswww.onsemi.com Advanced Package (5x6mm) with Excellent Thermal Conduction Ultra Low RDS(on) to Improve System Efficiency These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant30 V 0.9 mW @ 10 V 298 AApplications Hot Swap ApplicationD (

 1.1. Size:176K  onsemi
 ntmfs0d9n03cg.pdf pdf_icon

NTMFS0D9N03CGT1G

MOSFET - Power, SingleN-Channel, SO8-FL30 V, 0.9 mW, 298 ANTMFS0D9N03CGFeatureswww.onsemi.com Advanced Package (5x6mm) with Excellent Thermal Conduction Ultra Low RDS(on) to Improve System Efficiency These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant30 V 0.9 mW @ 10 V 298 AApplications Hot Swap ApplicationD (

 7.1. Size:187K  1
 ntmfs0d8n02p1et1g.pdf pdf_icon

NTMFS0D9N03CGT1G

MOSFET - Power, SingleN-Channel, SO8-FL25 V, 0.68 mW, 365 ANTMFS0D8N02P1EFeatures Small Footprint (5x6mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant0.68 mW @ 10 V25 V 365 AApplic

 7.2. Size:187K  onsemi
 ntmfs0d8n02p1e.pdf pdf_icon

NTMFS0D9N03CGT1G

MOSFET - Power, SingleN-Channel, SO8-FL25 V, 0.68 mW, 365 ANTMFS0D8N02P1EFeatures Small Footprint (5x6mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant0.68 mW @ 10 V25 V 365 AApplic

ПОКАЗАТЬ ЕЩЁ

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History: AP9467AGM | STF16N60M2 | HGP098N10S | MCU20N15 | ME4626-G | IPAW60R600P7S | AP6950GYT-HF

 

 
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