All MOSFET. NTMFS1D7N03CGT1G Datasheet

 

NTMFS1D7N03CGT1G Datasheet and Replacement


   Type Designator: NTMFS1D7N03CGT1G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 87 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 170 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 1770 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00174 Ohm
   Package: DFN5
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NTMFS1D7N03CGT1G Datasheet (PDF)

 0.1. Size:176K  1
 ntmfs1d7n03cgt1g.pdf pdf_icon

NTMFS1D7N03CGT1G

MOSFET - Power, SingleN-Channel, SO8-FL30 V, 1.74 mW, 170 ANTMFS1D7N03CGFeatures Wide SOA to Improve Inrush Current Managementwww.onsemi.com Advanced Package (5x6 mm) with Excellent Thermal Conduction Ultra Low RDS(on) to Improve System Efficiency These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant30 V 1.74 mW @ 1

 7.1. Size:177K  1
 ntmfs1d15n03cgt1g.pdf pdf_icon

NTMFS1D7N03CGT1G

MOSFET - Power, SingleN-Channel, SO8-FL30 V, 1.15 mW, 245 ANTMFS1D15N03CGFeatures Advanced Package (5x6 mm) with Excellent Thermal Conductionwww.onsemi.com Ultra Low RDS(on) to Improve System Efficiency These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXTypical Applications30 V 1.15 mW @ 10 V 245 A Hot Swap Application Power Load

 7.2. Size:177K  onsemi
 ntmfs1d15n03cg.pdf pdf_icon

NTMFS1D7N03CGT1G

MOSFET - Power, SingleN-Channel, SO8-FL30 V, 1.15 mW, 245 ANTMFS1D15N03CGFeatures Advanced Package (5x6 mm) with Excellent Thermal Conductionwww.onsemi.com Ultra Low RDS(on) to Improve System Efficiency These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXTypical Applications30 V 1.15 mW @ 10 V 245 A Hot Swap Application Power Load

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Keywords - NTMFS1D7N03CGT1G MOSFET datasheet

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