STM4605 MOSFET. Datasheet pdf. Equivalent
Type Designator: STM4605
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 6 A
Qgⓘ - Total Gate Charge: 10 nC
Cossⓘ - Output Capacitance: 120 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
Package: SOP8
STM4605 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STM4605 Datasheet (PDF)
stm4605.pdf
GreenProductSTM4605aS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.39 @ VGS=-10VSuface Mount Package.-40V -6A58 @ VGS=-4.5VD 5 4 G6 3D S7 2 SDS O-8D 8 1S1(TA=25C unless otherwise noted)ABS
stm4615.pdf
GreenProductSTM4615aS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.10.5 @ VGS=-10VSuface Mount Package.-40V -12.5A16 @ VGS=-4.5VESD Protected.D 5 4 G6 3D S7 2 SDS O-8D 8 1S1(TA=25C unless
stm4633.pdf
STM4633aS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.33 @ VGS=-10VSuface Mount Package.-30V -7.0A52 @ VGS=-4.5VESD Protected.D 5 4 G6 3D S7 2D SS O-8D 8 1S1(TA=25C unless otherwise noted)AB
stm4637.pdf
STM4637aS mHop Microelectronics C orp.Ver 1.1P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.30 @ VGS=-10VSuface Mount Package.-30V -7.7A48 @ VGS=-4.5VESD Protected.D 5 4 GD 6 3S7 2D SS O-88 1D S1(TA=25C unless otherwise noted)A
stm4639t.pdf
GreenProductSTM4639TaS mHop Microelectronics C orp.Ver 1.1P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.12.5 @ VGS=-10VSuface Mount Package.-30V -10A16.5 @ VGS=-4.5V ESD Protected.D 5 4 G6 3D S7 2D SSO-8D 8 1S1ABSOLUTE MAXIMUM R
stm4639.pdf
GreenProductSTM4639aS mHop Microelectronics C orp.Ver 2.1P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.8.5 @ VGS=-10VSuface Mount Package.-30V -14A13 @ VGS=-4.5VESD ProctecedD 5 4 G6 3D S7 2D SSO- 8D 8 1S1)ABSOLUTE MAXIMUM RA
stm4635.pdf
STM4635aS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.33 @ VGS=-10VSuface Mount Package.-40V -7A50 @ VGS=-4.5VESD ProctecedD 5 4 G6 3D S7 2 SDS O-8D 8 1S1(TA=25C unless otherwise noted )ABS
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918