Справочник MOSFET. STM4605

 

STM4605 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: STM4605
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6 A
   Qgⓘ - Общий заряд затвора: 10 nC
   Cossⓘ - Выходная емкость: 120 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.039 Ohm
   Тип корпуса: SOP8

 Аналог (замена) для STM4605

 

 

STM4605 Datasheet (PDF)

 ..1. Size:169K  samhop
stm4605.pdf

STM4605
STM4605

GreenProductSTM4605aS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.39 @ VGS=-10VSuface Mount Package.-40V -6A58 @ VGS=-4.5VD 5 4 G6 3D S7 2 SDS O-8D 8 1S1(TA=25C unless otherwise noted)ABS

 9.1. Size:170K  samhop
stm4615.pdf

STM4605
STM4605

GreenProductSTM4615aS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.10.5 @ VGS=-10VSuface Mount Package.-40V -12.5A16 @ VGS=-4.5VESD Protected.D 5 4 G6 3D S7 2 SDS O-8D 8 1S1(TA=25C unless

 9.2. Size:157K  samhop
stm4633.pdf

STM4605
STM4605

STM4633aS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.33 @ VGS=-10VSuface Mount Package.-30V -7.0A52 @ VGS=-4.5VESD Protected.D 5 4 G6 3D S7 2D SS O-8D 8 1S1(TA=25C unless otherwise noted)AB

 9.3. Size:157K  samhop
stm4637.pdf

STM4605
STM4605

STM4637aS mHop Microelectronics C orp.Ver 1.1P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.30 @ VGS=-10VSuface Mount Package.-30V -7.7A48 @ VGS=-4.5VESD Protected.D 5 4 GD 6 3S7 2D SS O-88 1D S1(TA=25C unless otherwise noted)A

 9.4. Size:108K  samhop
stm4639t.pdf

STM4605
STM4605

GreenProductSTM4639TaS mHop Microelectronics C orp.Ver 1.1P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.12.5 @ VGS=-10VSuface Mount Package.-30V -10A16.5 @ VGS=-4.5V ESD Protected.D 5 4 G6 3D S7 2D SSO-8D 8 1S1ABSOLUTE MAXIMUM R

 9.5. Size:122K  samhop
stm4639.pdf

STM4605
STM4605

GreenProductSTM4639aS mHop Microelectronics C orp.Ver 2.1P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.8.5 @ VGS=-10VSuface Mount Package.-30V -14A13 @ VGS=-4.5VESD ProctecedD 5 4 G6 3D S7 2D SSO- 8D 8 1S1)ABSOLUTE MAXIMUM RA

 9.6. Size:157K  samhop
stm4635.pdf

STM4605
STM4605

STM4635aS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.33 @ VGS=-10VSuface Mount Package.-40V -7A50 @ VGS=-4.5VESD ProctecedD 5 4 G6 3D S7 2 SDS O-8D 8 1S1(TA=25C unless otherwise noted )ABS

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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