STM4605 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: STM4605
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 2.5 W
Предельно допустимое напряжение сток-исток |Uds|: 40 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 6 A
Общий заряд затвора (Qg): 10 nC
Выходная емкость (Cd): 120 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.039 Ohm
Тип корпуса: SOP8
STM4605 Datasheet (PDF)
stm4605.pdf
GreenProductSTM4605aS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.39 @ VGS=-10VSuface Mount Package.-40V -6A58 @ VGS=-4.5VD 5 4 G6 3D S7 2 SDS O-8D 8 1S1(TA=25C unless otherwise noted)ABS
stm4615.pdf
GreenProductSTM4615aS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.10.5 @ VGS=-10VSuface Mount Package.-40V -12.5A16 @ VGS=-4.5VESD Protected.D 5 4 G6 3D S7 2 SDS O-8D 8 1S1(TA=25C unless
stm4633.pdf
STM4633aS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.33 @ VGS=-10VSuface Mount Package.-30V -7.0A52 @ VGS=-4.5VESD Protected.D 5 4 G6 3D S7 2D SS O-8D 8 1S1(TA=25C unless otherwise noted)AB
stm4637.pdf
STM4637aS mHop Microelectronics C orp.Ver 1.1P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.30 @ VGS=-10VSuface Mount Package.-30V -7.7A48 @ VGS=-4.5VESD Protected.D 5 4 GD 6 3S7 2D SS O-88 1D S1(TA=25C unless otherwise noted)A
stm4639t.pdf
GreenProductSTM4639TaS mHop Microelectronics C orp.Ver 1.1P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.12.5 @ VGS=-10VSuface Mount Package.-30V -10A16.5 @ VGS=-4.5V ESD Protected.D 5 4 G6 3D S7 2D SSO-8D 8 1S1ABSOLUTE MAXIMUM R
stm4639.pdf
GreenProductSTM4639aS mHop Microelectronics C orp.Ver 2.1P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.8.5 @ VGS=-10VSuface Mount Package.-30V -14A13 @ VGS=-4.5VESD ProctecedD 5 4 G6 3D S7 2D SSO- 8D 8 1S1)ABSOLUTE MAXIMUM RA
stm4635.pdf
STM4635aS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.33 @ VGS=-10VSuface Mount Package.-40V -7A50 @ VGS=-4.5VESD ProctecedD 5 4 G6 3D S7 2 SDS O-8D 8 1S1(TA=25C unless otherwise noted )ABS
Другие MOSFET... FDP054N10 , STM4633 , FDP060AN08A0 , FDP075N15AF102 , FDP083N15AF102 , FDP085N10AF102 , STM4615 , FDP090N10 , 60N06 , FDP100N10 , STM4550 , FDP10N60NZ , STM4532 , FDP120N10 , STM4470E , FDP12N50 , FDP12N50NZ .
