All MOSFET. NTMFS5C430NLT1G Datasheet

 

NTMFS5C430NLT1G Datasheet and Replacement


   Type Designator: NTMFS5C430NLT1G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 200 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 140 nS
   Cossⓘ - Output Capacitance: 1900 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm
   Package: DFN5
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NTMFS5C430NLT1G Datasheet (PDF)

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 ntmfs5c430nlt1g.pdf pdf_icon

NTMFS5C430NLT1G

NTMFS5C430NLPower MOSFET40 V, 1.4 mW, 200 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)1.4 mW @ 10 V40

 1.1. Size:174K  1
 ntmfs5c430nlt3g.pdf pdf_icon

NTMFS5C430NLT1G

NTMFS5C430NLMOSFET Power, Single,N-Channel40 V, 1.4 mW, 200 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant1.4 mW @ 10 V40 V200 A2.2 mW @ 4.5 VMAXIMUM RATINGS (TJ =

 2.1. Size:174K  onsemi
 ntmfs5c430nl.pdf pdf_icon

NTMFS5C430NLT1G

NTMFS5C430NLMOSFET Power, Single,N-Channel40 V, 1.4 mW, 200 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant1.4 mW @ 10 V40 V200 A2.2 mW @ 4.5 VMAXIMUM RATINGS (TJ =

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History: STD6N60M2 | IRFP21N60L | AP2318GEN-HF | STT3P2UH7 | UPA2756GR | IXTA08N120P

Keywords - NTMFS5C430NLT1G MOSFET datasheet

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