NTMFS5C430NLT3G
MOSFET. Datasheet pdf. Equivalent
Type Designator: NTMFS5C430NLT3G
Marking Code: 5C430L
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 110
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 200
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 70
nC
trⓘ - Rise Time: 140
nS
Cossⓘ -
Output Capacitance: 1900
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0014
Ohm
Package:
DFN5
NTMFS5C430NLT3G
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTMFS5C430NLT3G
Datasheet (PDF)
0.1. Size:174K 1
ntmfs5c430nlt3g.pdf
NTMFS5C430NLMOSFET Power, Single,N-Channel40 V, 1.4 mW, 200 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant1.4 mW @ 10 V40 V200 A2.2 mW @ 4.5 VMAXIMUM RATINGS (TJ =
1.1. Size:77K 1
ntmfs5c430nlt1g.pdf
NTMFS5C430NLPower MOSFET40 V, 1.4 mW, 200 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)1.4 mW @ 10 V40
2.1. Size:174K onsemi
ntmfs5c430nl.pdf
NTMFS5C430NLMOSFET Power, Single,N-Channel40 V, 1.4 mW, 200 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant1.4 mW @ 10 V40 V200 A2.2 mW @ 4.5 VMAXIMUM RATINGS (TJ =
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