All MOSFET. NTMFS5C612NLT1G Datasheet

 

NTMFS5C612NLT1G Datasheet and Replacement


   Type Designator: NTMFS5C612NLT1G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 167 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 235 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 51 nS
   Cossⓘ - Output Capacitance: 2953 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0015 Ohm
   Package: DFN5
 

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NTMFS5C612NLT1G Datasheet (PDF)

 0.1. Size:73K  1
 ntmfs5c612nlt1g.pdf pdf_icon

NTMFS5C612NLT1G

NTMFS5C612NLPower MOSFET60 V, 1.5 mW, 235 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NTMFS5C612NLWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compl

 2.1. Size:73K  onsemi
 ntmfs5c612nl.pdf pdf_icon

NTMFS5C612NLT1G

NTMFS5C612NLPower MOSFET60 V, 1.5 mW, 235 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NTMFS5C612NLWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compl

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 ntmfs5c612nt1g-te.pdf pdf_icon

NTMFS5C612NLT1G

MOSFET Power, Single,N-Channel60 V, 1.6 mW, 230 ANTMFS5C612NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX60 V 1.6 mW @ 10 V 230 AMAXIMUM RATINGS (TJ = 25C unless otherw

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History: NTMS4706NR2G | KP8M6 | UT2955G | STP13NK60Z | DMZ6005E | NTMFS5C609NLT1G | PSMN7R5-30YLD

Keywords - NTMFS5C612NLT1G MOSFET datasheet

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