All MOSFET. NTMFS5C645NLT1G Datasheet

 

NTMFS5C645NLT1G Datasheet and Replacement


   Type Designator: NTMFS5C645NLT1G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 79 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 900 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: DFN5
 

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NTMFS5C645NLT1G Datasheet (PDF)

 0.1. Size:114K  1
 ntmfs5c645nlt1g.pdf pdf_icon

NTMFS5C645NLT1G

NTMFS5C645NLPower MOSFET60 V, 4.0 mW, 100 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)4.0 mW @ 10 V60

 1.1. Size:118K  1
 ntmfs5c645nlt3g.pdf pdf_icon

NTMFS5C645NLT1G

NTMFS5C645NLPower MOSFET60 V, 4.0 mW, 100 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)4.0 mW @ 10 V60

 2.1. Size:114K  onsemi
 ntmfs5c645nl.pdf pdf_icon

NTMFS5C645NLT1G

NTMFS5C645NLPower MOSFET60 V, 4.0 mW, 100 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)4.0 mW @ 10 V60

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History: STT3405P | SML1201B8 | 3SK295 | S68N08R | WMO119N12LG4 | FDMS86300DC | 3SK298

Keywords - NTMFS5C645NLT1G MOSFET datasheet

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