All MOSFET. FDP10N60NZ Datasheet

 

FDP10N60NZ MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDP10N60NZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 185 W
   Maximum Drain-Source Voltage |Vds|: 600 V
   Maximum Gate-Source Voltage |Vgs|: 25 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
   Maximum Drain Current |Id|: 10 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 23 nC
   Maximum Drain-Source On-State Resistance (Rds): 0.75 Ohm
   Package: TO220

 FDP10N60NZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDP10N60NZ Datasheet (PDF)

 ..1. Size:659K  fairchild semi
 fdp10n60nz fdpf10n60nz.pdf

FDP10N60NZ FDP10N60NZ

November 2013FDP10N60NZ / FDPF10N60NZN-Channel UniFETTM II MOSFET600 V, 10 A, 750 mFeatures Description RDS(on) = 640 m (Typ.) @ VGS = 10 V, ID = 5 A UniFETTM II MOSFET is Fairchild Semiconductors high voltageMOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 23 nC)technology. This advanced MOSFET family has the smallest Low Crss (Typ.

 ..2. Size:659K  onsemi
 fdp10n60nz fdpf10n60nz.pdf

FDP10N60NZ FDP10N60NZ

November 2013FDP10N60NZ / FDPF10N60NZN-Channel UniFETTM II MOSFET600 V, 10 A, 750 mFeatures Description RDS(on) = 640 m (Typ.) @ VGS = 10 V, ID = 5 A UniFETTM II MOSFET is Fairchild Semiconductors high voltageMOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 23 nC)technology. This advanced MOSFET family has the smallest Low Crss (Typ.

 6.1. Size:554K  fairchild semi
 fdp10n60zu fdpf10n60zut.pdf

FDP10N60NZ FDP10N60NZ

April 2009TM UniFETFDP10N60ZU / FDPF10N60ZUTtmN-Channel MOSFET, FRFET 600V, 9A, 0.8Features Description RDS(on) = 0.65 ( Typ.)@ VGS = 10V, ID = 4.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 31nC)stripe, DMOS technology. Low Crss ( Typ. 15pF)This advance tech

 8.1. Size:483K  fairchild semi
 fdp10n50u fdpf10n50ut.pdf

FDP10N60NZ FDP10N60NZ

November 2009UniFETTMFDP10N50U / FDPF10N50UTtmN-Channel MOSFET500V, 8A, 1.05Features Description RDS(on) = 0.85 ( Typ.) @ VGS = 10V, ID = 4A These N-Channel enhancement mode power field effect transis-tors are p roduced using Fa irchilds proprietary, planar stripe, Low Gate Charge ( Typ. 18nC)DMOS technology. Low Crss ( Typ. 9pF)This advan ce technology

 8.2. Size:409K  fairchild semi
 fdp10n50f fdpf10n50ft.pdf

FDP10N60NZ FDP10N60NZ

January 2009UniFETTMFDP10N50F / FDPF10N50FTN-Channel MOSFET 500V, 9A, 0.85Features Description RDS(on) = 0.71 ( Typ.) @ VGS = 10V, ID = 4.5A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low Gate Charge ( Typ. 18nC)DMOS technology. Low Crss ( Typ. 10pF)This advance technology has

Datasheet: FDP075N15AF102 , FDP083N15AF102 , FDP085N10AF102 , STM4615 , FDP090N10 , STM4605 , FDP100N10 , STM4550 , IRFZ44N , STM4532 , FDP120N10 , STM4470E , FDP12N50 , FDP12N50NZ , FDP12N60NZ , STM4470A , FDP150N10 .

 

 
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