FDP10N60NZ Datasheet. Specs and Replacement

Type Designator: FDP10N60NZ  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 185 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm

Package: TO220

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FDP10N60NZ datasheet

 ..1. Size:659K  fairchild semi
 fdp10n60nz fdpf10n60nz.pdf pdf_icon

FDP10N60NZ

November 2013 FDP10N60NZ / FDPF10N60NZ N-Channel UniFETTM II MOSFET 600 V, 10 A, 750 m Features Description RDS(on) = 640 m (Typ.) @ VGS = 10 V, ID = 5 A UniFETTM II MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 23 nC) technology. This advanced MOSFET family has the smallest Low Crss (Typ.... See More ⇒

 ..2. Size:659K  onsemi
 fdp10n60nz fdpf10n60nz.pdf pdf_icon

FDP10N60NZ

November 2013 FDP10N60NZ / FDPF10N60NZ N-Channel UniFETTM II MOSFET 600 V, 10 A, 750 m Features Description RDS(on) = 640 m (Typ.) @ VGS = 10 V, ID = 5 A UniFETTM II MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 23 nC) technology. This advanced MOSFET family has the smallest Low Crss (Typ.... See More ⇒

 6.1. Size:554K  fairchild semi
 fdp10n60zu fdpf10n60zut.pdf pdf_icon

FDP10N60NZ

April 2009 TM UniFET FDP10N60ZU / FDPF10N60ZUT tm N-Channel MOSFET, FRFET 600V, 9A, 0.8 Features Description RDS(on) = 0.65 ( Typ.)@ VGS = 10V, ID = 4.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 31nC) stripe, DMOS technology. Low Crss ( Typ. 15pF) This advance tech... See More ⇒

 8.1. Size:483K  fairchild semi
 fdp10n50u fdpf10n50ut.pdf pdf_icon

FDP10N60NZ

November 2009 UniFETTM FDP10N50U / FDPF10N50UT tm N-Channel MOSFET 500V, 8A, 1.05 Features Description RDS(on) = 0.85 ( Typ.) @ VGS = 10V, ID = 4A These N-Channel enhancement mode power field effect transis- tors are p roduced using Fa irchild s proprietary, planar stripe, Low Gate Charge ( Typ. 18nC) DMOS technology. Low Crss ( Typ. 9pF) This advan ce technology... See More ⇒

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Detailed specifications: FDP075N15AF102, FDP083N15AF102, FDP085N10AF102, STM4615, FDP090N10, STM4605, FDP100N10, STM4550, IRF3205, STM4532, FDP120N10, STM4470E, FDP12N50, FDP12N50NZ, FDP12N60NZ, STM4470A, FDP150N10

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