NVMFD5485NLT1G Datasheet. Specs and Replacement

Type Designator: NVMFD5485NLT1G  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 38.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 19.5 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26.6 nS

Cossⓘ - Output Capacitance: 126 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm

Package: DFN8-5X6

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NVMFD5483NL MOSFET Power, Dual N-Channel 60 V, 36 mW, 24 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Designs Low RDS(on) to Minimize Conduction Losses V(BR)DSS RDS(on) MAX ID MAX Low Capacitance to Minimize Driver Losses 36 mW @ 10 V 175 C Operating Temperature 60 V 24 A NVMFD5483NLWF - Wettable Flank Option for Enhanced Optical 45 mW @ 4... See More ⇒

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Detailed specifications: NTMFS6H848NLT1G, NTMFS6H852NLT1G, NTTFS4C05NTAG, NTTFS4C10NTAG, NTTFS4C25NTAG, NTTFS5C454NLTAG, NVMFD024N06CT1G, NVMFD5483NLT1G, 10N60, PE5E4BA, PK6A4BA, PKC26BB, SCDP120R040NP4B, STS65R190FS2, STS65R190L8AS2TR, STS65R190SS2, STS65R190SS2TR

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