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NVMFD5485NLT1G Specs and Replacement


   Type Designator: NVMFD5485NLT1G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 38.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 19.5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 26.6 nS
   Cossⓘ - Output Capacitance: 126 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm
   Package: DFN8-5X6
 

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NVMFD5485NLT1G Specs

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NVMFD5485NLT1G

NVMFD5483NL MOSFET Power, Dual N-Channel 60 V, 36 mW, 24 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Designs Low RDS(on) to Minimize Conduction Losses V(BR)DSS RDS(on) MAX ID MAX Low Capacitance to Minimize Driver Losses 36 mW @ 10 V 175 C Operating Temperature 60 V 24 A NVMFD5483NLWF - Wettable Flank Option for Enhanced Optical 45 mW @ 4... See More ⇒

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Detailed specifications: NTMFS6H848NLT1G , NTMFS6H852NLT1G , NTTFS4C05NTAG , NTTFS4C10NTAG , NTTFS4C25NTAG , NTTFS5C454NLTAG , NVMFD024N06CT1G , NVMFD5483NLT1G , AON6414A , PE5E4BA , PK6A4BA , PKC26BB , SCDP120R040NP4B , STS65R190FS2 , STS65R190L8AS2TR , STS65R190SS2 , STS65R190SS2TR .

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