STS65R190L8AS2TR PDF and Equivalents Search

 

STS65R190L8AS2TR Specs and Replacement

Type Designator: STS65R190L8AS2TR

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 147 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm

Package: DFN4-8X8

STS65R190L8AS2TR substitution

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STS65R190L8AS2TR datasheet

 0.1. Size:553K  silan
 sts65r190fs2 sts65r190l8as2tr sts65r190ts2 sts65r190ss2 sts65r190ss2tr.pdf pdf_icon

STS65R190L8AS2TR

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 8.1. Size:571K  silan
 sts65r280ds2tr sts65r280fs2.pdf pdf_icon

STS65R190L8AS2TR

STS65R280D(F)S2 14A 650V MOS 2 STS65R280D(F)S2 N MOSFET MOS 1 STS65R280D(F)S2 / 3... See More ⇒

 8.2. Size:495K  silan
 sts65r580ds2tr sts65r580fs2 sts65r580ss2 sts65r580ss2tr sts65r580mjs2.pdf pdf_icon

STS65R190L8AS2TR

STS65R580D(F)(S)(MJ)S2 8A, 650V MOS 2 STS65R580D(F)(S)(MJ)S2 N MOSFET MOS 1 1 3 STS65R580D(F)(S)(MJ)S2 ... See More ⇒

Detailed specifications: NVMFD024N06CT1G, NVMFD5483NLT1G, NVMFD5485NLT1G, PE5E4BA, PK6A4BA, PKC26BB, SCDP120R040NP4B, STS65R190FS2, IRFP250N, STS65R190SS2, STS65R190SS2TR, STS65R190TS2, STS65R280DS2TR, STS65R280FS2, STS65R580DS2TR, STS65R580FS2, STS65R580MJS2

Keywords - STS65R190L8AS2TR MOSFET specs

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 STS65R190L8AS2TR replacement

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